Memory read circuit of radio frequency identification tag chip

Abstract

The invention provides a memory reading circuit of a radio frequency identification tag chip, which belongs to the technical field of integrated circuit (IC) design. The reading circuit includes: a high-voltage isolation MOS transistor, and also includes: a gate control circuit module for controlling the conduction state of the high-voltage isolation MOS transistor, and a capacitor bootstrap circuit module, and the capacitor bootstrap circuit module is used to lift the The gate controls the output voltage of the circuit module so that the high-voltage isolation MOS transistor is turned on during the read operation, and the voltage transmitted by the high-voltage isolation MOS transistor to the memory is greater than or equal to all the voltages biased on the read circuit. read voltage. The memory reading circuit realizes the reading operation under the low voltage condition such as the normal power supply voltage of the RFID tag chip, the reading operation is accurate and sensitive, the circuit structure is simple, and the power consumption of the reading operation is small.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit (IC) design, relates to a radio frequency identification (RFID) tag chip, in particular to a reading circuit capable of reading a memory of the RFID tag chip under low-voltage conditions. Background technique [0002] Memory usually has the characteristics of high programming / erasing voltage and low reading voltage. For example, EEPROM (Electrically Erasable Programmable Read-Only Memory, Electrically Erasable Programmable Read-Only Memory) generally requires 15V high voltage when programming / erasing. Normal V is required when reading DD (The normal power supply voltage provided by the IC itself) is enough. Similarly, there are similar problems for FLASH (flash memory) and OTP (One Time Programmable, one-time programmable memory). [0003] Therefore, when this type of memory is applied to the memory module of the RFID tag chip, it is necessary to use a MOSFET capable of withstanding hi...

AI Technical Summary

Problems solved by technology

However, at the same time, the problem is that the leakage of the zero-threshold ZMOS transistor is very large, and its application is greatly limited, which cannot greatly help the design of the memory read circuit of the RFID tag chip with low voltage and low power consumption.

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