Cleaning agent for solar energy monocrystalline silicon wafer

A single crystal silicon wafer and cleaning agent technology, which is applied in the direction of detergent composition, soap detergent composition, surface active non-soap compound and cleaning composition, etc., can solve silicon wafer corrosion, incomplete cleaning, environmental pollution, etc. problems, achieve the effect of less acid and alkali consumption, prevent pollution and reduce the cost of use

Active Publication Date: 2014-04-09
长沙艾森设备维护技术有限公司
View PDF3 Cites 11 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The present invention aims at defects such as incomplete cleaning of silicon wafer cleaning agents in the prior art, serious corrosion to silicon wafers, high cost, and environmental pollution. A cleaning agent for solar monocrystalline silicon wafers that can simplify the cleaning process without polluting the environment and endangering human health

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Cleaning agent for solar energy monocrystalline silicon wafer

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0018] 1. Preparation of cleaning agent: Dissolve 8g of potassium hydroxide in parts by mass, 1g of isomeric alcohol polyoxyethyl ether and 1g of isooctanyl polyoxyethylene ether in 40g of water to prepare component A with a total mass part of 50g. Mixture EDTA·4Na3g is dissolved in 47g of water to prepare B component with a total mass of 50g. When using, mix A and B components, dilute 15 times, and prepare a working solution;

[0019] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1kg of the working solution prepared in step 1 at 50°C, firstly pre-wash the solid insoluble matter through ultrasonic pre-washing, then perform ultrasonic cleaning, and finally perform several times of clear water Centrifuge and dry after rinsing. The cleaning effect is shown in Table 1.

Embodiment 2

[0021] 1. Preparation of cleaning agent: Dissolve 9g of potassium hydroxide in parts by mass, 2g of isomeric alcohol polyoxyethyl ether and 1g of isooctanyl polyoxyethylene ether in 38g of water to prepare component A with a total mass part of 50g. Mixture EDTA·2Na1g is dissolved in 49g of water to prepare B component with a total mass of 50g. When using, mix A and B components, dilute 20 times, and prepare a working solution;

[0022] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1kg of the working solution prepared in step 1 at 55°C, first pre-wash by ultrasonic to wash away the solid insoluble matter, then perform ultrasonic cleaning, and finally perform multiple times Rinse with water and dry by centrifugation. The cleaning effect is shown in Table 1.

Embodiment 3

[0024] 1. Preparation of cleaning agent: dissolve 8g of potassium hydroxide, 2g of APG and 1g of isooctyl alcohol polyoxyethylene ether in 39g of water to form component A with a total mass of 50g, and dissolve 2g of chelating agent ammonium citrate Mix 48g of water to prepare Component B with a total mass of 50g. When using, mix Components A and B, dilute 10 times, and prepare a working solution;

[0025] 2. The method of cleaning the silicon wafer: put the monocrystalline silicon wafer in 1 kg of the working solution prepared in step 1 at 60°C, first pre-wash by ultrasonic to wash off the solid insoluble matter, then perform ultrasonic cleaning, and finally perform multiple times Rinse with water and dry by centrifugation. The cleaning effect is shown in Table 1.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a cleaning agent for a solar energy monocrystalline silicon wafer. The cleaning agent comprises the following components of potassium hydroxide, a surfactant, a penetrating agent and a chelating agent. The cleaning agent has a good cleaning effect for the monocrystalline silicon wafer and is low in use cost. Compared with other silicon wafer-cleaning agents, the cleaning agent provided by the invention can simplify a cleaning process, does not pollute the environment and has no harm to human health.

Description

technical field [0001] The invention relates to a cleaning agent for solar single crystal silicon wafers, which belongs to the field of silicon wafer cleaning and protection. Background technique [0002] Monocrystalline silicon solar cells are the fastest growing and most widely used environmentally friendly batteries. Its processing technology has been finalized and widely used: cutting monocrystalline silicon rods into pieces, and then performing initial polishing and texturing. After the silicon wafer is cut and formed, the crumbs and oil stains on the surface need to be cleaned, and then proceed to the next process. If the silicon wafer is not cleaned before the initial throwing and texturing, it will cause the surface to be scratched after texturing, and the product will be scrapped. Therefore, the process requires the silicon wafers to be cleaned to a uniform gray color before the initial polishing, but the current cleaning agents mostly use HF acid or strong alkali ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C11D10/02
Inventor 孙湘辉邵凡
Owner 长沙艾森设备维护技术有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products