Manufacturing method of current blocking layer and corresponding LED chip
A technology of a current blocking layer and a manufacturing method, which is applied in the manufacturing of circuits, electrical components, semiconductor/solid-state devices, etc., can solve the problems of affecting the insulation effect and poor blocking effect, and achieve good insulation effect, good adaptability and good luminous flux. Effect
Active Publication Date: 2016-08-17
JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD
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Problems solved by technology
For LED chips, there is no current blocking layer in the existing LED chips, or the blocking effect is not good
Therefore, it will be slightly conductive at a higher voltage, which affects the effect of insulation
Method used
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[0024] The technical solutions in the embodiments of the present invention will be described in detail below, obviously, the described embodiments are only some of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.
[0025] A method for manufacturing a current blocking layer of the present invention, comprising the steps of:
[0026] S1. Cleaning the surface of the wafer. When cleaning the wafer surface, wash it with aqua regia for 10 minutes, wash it with a mixture of sulfuric acid and hydrogen peroxide for 10 minutes, and then rinse with water and spin dry.
[0027] S2. Etching the Mesa region to the N-type semiconductor layer. Specifically, when fabricating the Mesa region, photolithography is performed first, and then plasma etching is perfo...
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The invention discloses a manufacture method of a current blocking layer and a corresponding light-emitting diode (LED) chip. The manufacture method comprises the following steps of 1, washing the surface of a wafer; 2, etching a Mesa zone on an N-type semi-conductor layer; 3, putting the wafer in the cavity of a gas phase chemical deposition apparatus, preheating the wafer, pumping vacuum and keeping temperature in the cavity to be constant; 4, depositing a silicon dioxide film for the first time; 5, depositing the silicon dioxide film for the second time; 6, depositing the silicon dioxide film for the third time, performing lithography etching to form the current blocking layer and removing photoresist. According to the manufacture method of the current blocking layer, the laminated current blocking layer is formed by depositing for multiple times, therefore, silicon can fully react to generate silicon dioxide, and good insulation effect can be achieved. The LED chip manufactured by the manufacture method is uniform in light, stable in performance and good in luminous flux. Furthermore, the manufacture method is good in adaptability, and the current blocking layers of different shapes and thicknesses can be matched with chips of different sizes.
Description
technical field [0001] The invention relates to the field of LED chip manufacturing, in particular to a method for manufacturing a current blocking layer and an LED chip with the current blocking layer formed by the above manufacturing method. Background technique [0002] As the world's most attention-grabbing new-generation light source, LED is known as the most promising green lighting source in the 21st century because of its advantages such as high brightness, low heat, long life, non-toxicity, and recyclability. LED is a semiconductor electronic component capable of emitting light, which can be widely used in many fields such as circuits and lighting. As for the LED chip, there is no current blocking layer in the existing LED chip, or the blocking effect is not good. Therefore, it will be slightly conductive at a higher voltage, which affects the effect of insulation. Contents of the invention [0003] In view of this, the present invention provides a method for ma...
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IPC IPC(8): H01L33/00H01L33/14
CPCH01L21/02164H01L21/022H01L21/02271H01L33/0075H01L33/145
Inventor 李忠武魏天使何金霞
Owner JUCAN PHOTOELECTRIC TECH (SUQIAN) CO LTD