A manufacturing method of a high-speed broadband silicon-optical transition board and a silicon-based optical interconnection device

Abstract

The invention discloses a method for manufacturing a high-speed broadband silicon light adapter plate, and a silicon-based optical interconnection device. A photonic device and a TSV are communicated through first and second RDLs; a first electron device and a second electron device are respectively connected with the photonic device through a first salient point and a second salient point; a third RDL and a third back salient point are connected with a substrate through the TSV, so that the communication between the substrate and a front CMOS (Complementary Metal Oxide Semiconductor) / photonic device is realized. In the invention, an advanced CMOS chip and multiple monolithic silicon optical devices are mixed and integrated. Meanwhile, the monolithic integration of the high-performance silicon photonic devices on an SOI (Silicon on Insulator) substrate and the advanced manufacture of the CMOS chips are guaranteed, the high-performance silicon photonic devices and the CMOS chips can be manufactured by adopting various advanced and convenient processes, and the cost can be greatly reduced by fully utilizing a CMOS process. Moreover, the ultra-short-distance high-speed electrical interconnection between each silicon photonic device in the monolithic integration and each advanced CMOS chip is realized by adopting a TSV technology, and the high-speed broadband silicon light interconnection is realized.

Description

Technical field [0001] The invention relates to the technical field of microelectronics, in particular to a method for manufacturing a high-speed broadband silicon optical switch board and a silicon-based optical interconnection device. Background technique [0002] In the optoelectronic module, it mainly includes two parts: the optical part of the chip and the matching and control circuit. Among them, the photonic chip mainly includes two kinds of active and passive. The active ones mainly include photoelectric modulator (modulator), photodetector (photodetector), and passive devices are mainly some multiplexing / demultiplexing (mux, demux) and optical waveguides. The electrical chip mainly involves the driver of the photoelectric modulator, the amplifier of the photodetector (transimpedance amplifier TIA or limiting amplifier LA or other types of amplifiers), and other matching and control circuits, such as clock recovery (CDR) ), serial-to-parallel conversion (Serdes), switch...

AI Technical Summary

Problems solved by technology

The development trend of the mismatch between the two in terms of process nodes determines that it is obviously inappropriate to use the same CMOS process to complete the optical and electrical parts, and it is not the best choice in terms of cost control.

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