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40results about How to "Increase port density" patented technology

High speed protocol for interconnecting modular network devices

A network switch for network communications is disclosed. The switch includes a first data port interface, supporting at least one data port transmitting and receiving data at a first data rate and a second data port interface, supporting at least one data port transmitting and receiving data at a second data rate. A memory management unit for communicating data from at least one of the first data port interface and the second data port interface and a memory is also included. The switch uses a communication channel for communicating data and messaging information between the first data port interface, the second data port interface, and the memory management unit. The switch also has a plurality of lookup tables, including an address resolution lookup table, a VLAN table and module port table. The network switch has a unique module identifier and of the first data port interface and the second data port interface is configured to determine forwarding information from a header for an incoming data packet received at a port of the one data port interface. The port interfaces are configured to determine the forwarding information from the header and to determine a destination module identifier for a destination port for the data packet from the module port table.
Owner:AVAGO TECH INT SALES PTE LTD

Communication device, pluggable optical module, communication system, method and storage medium

The invention provides communication equipment, a pluggable optical module, a communication system, a method and a storage medium, and belongs to the technical field of communication. The communication device comprises a control module and an address management module. The control module is used for reporting an insertion event to the address management module when the insertion event of the pluggable optical module is detected, and an appointed pin is arranged on the pluggable optical module; And the address management module is used for selecting first address information from the address database when an insertion event is received, setting an appointed pin of the pluggable optical module as a first level, enabling the pluggable optical module to be in an address allocation mode, and allocating the first address information to the pluggable optical module. Address information distributed by different pluggable optical modules can be ensured not to be repeated, the limitation of thenumber of address pins is avoided, only one designated pin needs to be arranged on the pluggable optical module, the number of pins can be reduced, the packaging size of the pluggable optical module is reduced, and then the port density of communication equipment is improved.
Owner:XFUSION DIGITAL TECH CO LTD

Reduced-cross-talk coherent optical transmitter

An electro-optical modulator includes a substrate comprising a first Mach-Zehnder modulator comprising a first waveguide and a second waveguide and a second Mach-Zehnder modulator comprising a first waveguide and a second waveguide. A first positive signal electrode is positioned on the substrate over the first waveguide of the first Mach-Zehnder modulator and a first negative signal electrode is positioned on the substrate over the second waveguide of the first Mach-Zehnder modulator. The first positive signal electrode and the first negative signal electrode are connected to a first differential signal input. A second positive signal electrode is positioned on the substrate over the first waveguide of the second Mach-Zehnder modulator and a second negative signal electrode positioned on the substrate over the second waveguide of the second Mach-Zehnder modulator. The second positive signal electrode and the second negative signal electrode are connected to a second differential signal input. A first ground electrode is positioned on the substrate between the first and second Mach-Zehnder modulators connected to ground potential. A second ground electrode is connected to ground potential and positioned on the substrate adjacent to the first Mach-Zehnder modulator such that the first positive signal electrode and the first negative signal electrode are between the second ground electrode and the first ground electrode. A third ground electrode is connected to ground potential and positioned on the substrate adjacent to the second Mach-Zehnder modulator such that the second positive signal electrode and the second negative signal electrode are between the third ground electrode and the first ground electrode. A plurality of first electrical connectors connect the first ground electrode to the second ground electrode and a plurality of second electrical connectors connect the first ground electrode to the third ground electrode. A spacing between at least two of the plurality of first electrical connectors is chosen to achieve a desired cross talk between an optical signal generated by the first Mach-Zehnder modulator and an optical signal generated by the second Mach-Zehnder modulator.
Owner:II VI DELAWARE INC

A manufacturing method of a high-speed broadband silicon-optical transition board and a silicon-based optical interconnection device

ActiveCN103787268BEliminate separate manufacturingRealize integrated processSemiconductor/solid-state device detailsSolid-state devicesShortest distancePhotonics
The invention discloses a method for manufacturing a high-speed broadband silicon light adapter plate, and a silicon-based optical interconnection device. A photonic device and a TSV are communicated through first and second RDLs; a first electron device and a second electron device are respectively connected with the photonic device through a first salient point and a second salient point; a third RDL and a third back salient point are connected with a substrate through the TSV, so that the communication between the substrate and a front CMOS (Complementary Metal Oxide Semiconductor) / photonic device is realized. In the invention, an advanced CMOS chip and multiple monolithic silicon optical devices are mixed and integrated. Meanwhile, the monolithic integration of the high-performance silicon photonic devices on an SOI (Silicon on Insulator) substrate and the advanced manufacture of the CMOS chips are guaranteed, the high-performance silicon photonic devices and the CMOS chips can be manufactured by adopting various advanced and convenient processes, and the cost can be greatly reduced by fully utilizing a CMOS process. Moreover, the ultra-short-distance high-speed electrical interconnection between each silicon photonic device in the monolithic integration and each advanced CMOS chip is realized by adopting a TSV technology, and the high-speed broadband silicon light interconnection is realized.
Owner:NAT CENT FOR ADVANCED PACKAGING

A manufacturing method of through-silicon via device applied to high-speed broadband optical interconnect and device thereof

ActiveCN103787264BEliminate separate manufacturingRealize integrated processSemiconductor/solid-state device manufacturingPhotonicsFiller metal
The invention discloses a manufacturing method applied to a high-speed broadband optical interconnection TSV device and the silicon-based optical interconnection device. According to the method and the silicon-based optical interconnection device, firstly, a wide ring is etched to be filled with insulating material, then, silicon surrounded by the insulating ring is etched to form deep TSVs, and finally, the deep TSVs are filled with metal to be connected with the electrodes of front face photonic devices. Due to formation of the wide ring, the thickness of an insulating layer is increased, meanwhile, filling of the insulating material is facilitated, and therefore the TSV parasitic capacitance is greatly reduced, and transmission of high-speed broadband signals is facilitated; meanwhile, the TSVs are formed after the wide ring is filled with the insulating material, many technological problems caused by the situation that in a traditional technology, the insulating material at the bottoms of the TSVs is first selectively etched when the TSVs are metallized are avoided, and the silicon-based optical interconnection device can be connected to the electrodes of the wafer front face photonic devices from the back face more easily. According to the method and the silicon-based optical interconnection device, CMOS devices are integrated on the back face, the Si photonic devices are integrated on the front face, higher freedom degree can be provided for photonic monolithic integration design, and it is also guaranteed that more light source coupling modes can be selected in future.
Owner:NAT CENT FOR ADVANCED PACKAGING
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