The invention discloses a manufacturing method applied to a high-speed
broadband optical
interconnection TSV device and the
silicon-based optical
interconnection device. According to the method and the
silicon-based optical
interconnection device, firstly, a wide ring is etched to be filled with insulating material, then,
silicon surrounded by the insulating ring is etched to form deep TSVs, and finally, the deep TSVs are filled with
metal to be connected with the electrodes of front face photonic devices. Due to formation of the wide ring, the thickness of an insulating layer is increased, meanwhile, filling of the insulating material is facilitated, and therefore the TSV
parasitic capacitance is greatly reduced, and transmission of high-speed
broadband signals is facilitated; meanwhile, the TSVs are formed after the wide ring is filled with the insulating material, many technological problems caused by the situation that in a traditional technology, the insulating material at the bottoms of the TSVs is first selectively etched when the TSVs are metallized are avoided, and the silicon-based optical interconnection device can be connected to the electrodes of the
wafer front face photonic devices from the back face more easily. According to the method and the silicon-based optical interconnection device,
CMOS devices are integrated on the back face, the Si photonic devices are integrated on the front face, higher freedom degree can be provided for photonic monolithic integration design, and it is also guaranteed that more
light source coupling modes can be selected in future.