Magnetic bit cell double voltage writing method

Abstract

A magnetic bit cell double voltage writing method comprises the following four steps that step 1, an address of a line to which a bit cell to be written belongs needs to be found out to determine the location of the line to which the bit cell to be written belongs in a storage array; step 2, according to a requirement of writing '0' or '1', a writing circuit is associated with a corresponding writing voltage, so that the voltage and current which are required by the operation of writing '0' or '1' are prepared; step 3, an address of a row to which the bit cell to be written belongs needs to be found out to determine the location of the row to which the bit cell to be written belongs in the storage array; the step 3 works together with the step 1, so that a specific location of the bit cell to be written in the storage array is determined; step 4, through the step 1, the step 2 and the step 3, a current path from an associated writing voltage to an earth wire Gnd through the bit cell is formed; according to the requirement of writing '0' or '1', the currents flow from a bit line of the bit cell to a source line of the bit cell or from the source line of the bit cell to the bit line of the bit cell respectively, and the operation of writing '0' or '1' is completed.

Description

technical field [0001] The invention relates to a magnetic random access memory, in particular to a magnetic bit cell dual-voltage writing method used in the magnetic random access memory with planar magnetic anisotropy and perpendicular magnetic anisotropy. The present invention is also applicable to write operations in any non-volatile memory or non-volatile logic circuit based on an asymmetric write mechanism. The invention belongs to the technical field of novel non-volatile random access memory in semiconductor memory. Background technique [0002] Spin-transfer torque magnetoresistive random access memory (STT-MRAM) is generally considered to be a A storage technology that replaces the existing volatile static random access memory (SRAM) and dynamic random access memory (DRAM). [0003] The core storage element of spin-transfer torque magnetoresistive random access memory is the magnetic tunnel junction (MTJ). It is mainly a three-layer stack structure, a free layer...

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Problems solved by technology

[0014] 1. Purpose: Based on the fact that the actual voltage required for the two write operations of the magnetic tunnel junction is less than Vdd, and the asymmetric characteristics of the voltage and current required for the two write operations, the magnetic tunnel junction write mentioned in the above background In order to solve the problem of unnecessary waste of input power consumption, the present invention provides a dual-voltage writing method for magnetic bit cells, which is a method for writing "0" and writing "1" operations using dual voltages, thereby reducing the number of write operations. operating power consumption, maximizing utilization of magnetic tunnel junction write power consumption

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