Gas spraying device capable of generating air curtain and thin film deposition device thereof

Abstract

The invention discloses a gas spraying device capable of generating an air curtain, which comprises a first spraying unit and a second spraying unit. The first spraying unit is provided for spraying a reaction gas to form a process gas zone. The second spraying unit ring is arranged around the first spraying unit, and the second spraying unit has a buffer gas supply chamber and a plate body. The buffer gas supply chamber provides a buffer gas. The plate ring is arranged around the first spraying unit and has a plurality of through holes for providing the buffer gas to pass through to form an air curtain surrounding the reaction gas. Utilize this gas spraying device that can produce gas curtain, in another embodiment, the present invention also provides a kind of thin film deposition device, avoid vacuum negative pressure to directly influence reaction gas by this gas curtain, to prolong reaction gas residence time, and Improve gas usage and coating efficiency.

Description

technical field [0001] The invention relates to a gas spraying technology, in particular to a gas spraying device capable of generating a gas curtain and a thin film deposition device thereof. Background technique [0002] The design of the showerhead of the metalorganic chemical vapor deposition (MOCVD) is the main factor affecting the uniformity of the airflow field and the coating rate. At present, the design of the gas sprinkler head is mainly arranged above the process cavity, and includes a chip carrier with a cover placed inside the cavity. The gas spraying head sprays reactive gas toward the chips on the chip carrier from above the chip carrier. [0003] MOCVD is applied to the process of LED epitaxy. The uniformity and stagnation time of the gas flow field of the reaction gas sprayed by the gas spray head will be one of the key technologies to determine the color temperature of LEDs (LED binning) and reduce cost and energy saving. When the concentration of the rea...

AI Technical Summary

Problems solved by technology

[0005] Although the pumping of the vacuum pump can improve the uniformity of the gas flow field, but in the process, when the reaction gas is sprayed onto the chip through the gas spray head, the reaction gas will be drawn away quickly due to the operation of the vacuum pump, which will cause The stagnation time of the reaction gas in the reaction zone in the chamber is shortened

When the reaction gas cannot stagnate in the reaction chamber and is drawn out of the chamber by the vacuum pump, the utilization rate of the reaction gas will be reduced, thereby affecting the coating efficiency

In addition, the closer to the pumping position in the cavity, the lower the concentration of the reaction gas, which will also affect the uniformity of the wavelength distribution at the edge of the wafer.

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