Preparation method of aluminium nitride base ceramic copper-clad plate

A ceramic copper clad laminate and aluminum nitride substrate technology, which is applied in the field of copper clad laminate manufacturing, can solve the problems of large thermal expansion coefficient, weak local sintering, voids, etc.

Active Publication Date: 2014-05-28
李磊 +1
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

Although aluminum oxide-based ceramic copper-clad laminates can meet the above basic requirements, their thermal conductivity is more than 6 times lower than that of aluminum nitride-based ceramic copper-clad laminates, and the thermal expansion coefficient is larger than that of aluminum nitride-based ceramic copper-clad laminates.
Because it is static sintering, the second batch of sintering can only be carried out after one batch of sintering, and before the second batch of sintering, the temperature in the furnace tube and the flow rate of nitrogen and oxygen atmosph

Method used

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  • Preparation method of aluminium nitride base ceramic copper-clad plate

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Experimental program
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Effect test

Embodiment 1

[0048] (1) Chemical oxidation treatment of copper foil

[0049] ①Oxygen-free copper foil size 193mm×145mm×0.2mm, pre-treatment;

[0050] ② Put the copper foil into molten sodium nitrate at 350°C, and the oxidation time is 20 minutes, forming dense and firm Cu on the surface of the copper foil. 2 O film.

[0051] (2) High temperature oxidation of aluminum nitride ceramic substrate

[0052] The size of the aluminum nitride ceramic substrate is 200mm × 150mm × 0.38mm, pre-treatment; the aluminum nitride ceramic substrate is inserted into the Al 2 o 3 The material of the ceramic plate frame is pushed into the three-station high-temperature oxidation furnace tube for oxidation treatment. The parameters are as follows: high-temperature oxidation temperature 1095°C, oxygen flow rate 30ml / min, and holding time 230min.

[0053] (3) Magnetron sputtering of aluminum nitride ceramic substrate

[0054] RF power 76W, working pressure 1.0Pa, Ar flow rate 78ml / min, O 2 The flow rate is ...

Embodiment 2

[0067] (1) Chemical oxidation treatment of copper foil

[0068] ①Oxygen-free copper foil size 193mm×145mm×0.3mm, pre-treatment;

[0069] ② Put the copper foil into molten sodium nitrate at 360°C, and the oxidation time is 18 minutes, forming dense and firm Cu on the surface of the copper foil. 2 O film.

[0070] (2) High temperature oxidation of aluminum nitride ceramic substrate

[0071] The size of the aluminum nitride ceramic substrate is 200mm × 150mm × 0.63mm, pre-treatment; the aluminum nitride ceramic substrate is inserted into the Al 2 o 3 The material of the ceramic plate frame is pushed into the three-station high-temperature oxidation furnace tube for oxidation treatment. The parameters are as follows: high-temperature oxidation temperature 1100°C, oxygen flow rate 25ml / min, and holding time 215min.

[0072] (3) Magnetron sputtering of aluminum nitride ceramic substrate

[0073] RF power 76W, working pressure 1.0Pa, Ar flow rate 77ml / min, O 2 The flow rate is ...

Embodiment 3

[0086] (1) Chemical oxidation treatment of copper foil

[0087] ①Oxygen-free copper foil size 193mm×145mm×0.35mm, pre-treatment;

[0088] ② Put the copper foil into molten sodium nitrate at 370°C, and the oxidation time is 15 minutes, forming dense and firm Cu on the surface of the copper foil. 2 O film.

[0089] (2) High temperature oxidation of aluminum nitride ceramic substrate

[0090]The size of the aluminum nitride ceramic substrate is 200mm×150mm×1.0mm, pre-treatment; the aluminum nitride ceramic substrate is inserted into the Al 2 o 3 The material of the ceramic plate frame is pushed into the three-station high-temperature oxidation furnace tube for oxidation treatment. The parameters are as follows: high-temperature oxidation temperature 1105°C, oxygen flow rate 20ml / min, and holding time 200min.

[0091] (3) Magnetron sputtering of aluminum nitride ceramic substrate

[0092] RF power 76W, Ar flow rate 76ml / min, O 2 The flow rate is 7.6ml / min, and the oxygen par...

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Abstract

The invention belongs to the technical field of copper-clad plate manufacturing, and particularly relates to a preparation method of an aluminium nitride base ceramic copper-clad plate. The preparation method comprises the following steps: pretreating an oxygen-free red copper foil, then putting the pretreated oxygen-free red copper foil in molten sodium nitrate, and carrying out medium temperature chemical oxidation treatment; pretreating an aluminum nitride substrate, and then carrying out high-temperature oxidation treatment; and carrying out magnetron sputtering treatment on the aluminum nitride substrate subjected to high temperature oxidation, prepressing the treated oxygen-free red copper foil into a circular arc shape, stacking the circular arc-shaped oxygen-free red copper foil and the aluminum nitride substrate together, putting in a chained bonding furnace, carrying out high temperature dynamic continuous bonding, and then treating by adopting a sequential temperature difference alternative falling temperature method, thus obtaining the aluminium nitride base ceramic copper-clad plate. The preparation method is simple in production efficiency, stable in quality and low in cost. The prepared aluminium nitride base ceramic copper-clad plate has the characteristics of low void ratio, low coefficient of thermal expansion, low stress, high thermal conductivity, high peel strength and large bonding area.

Description

technical field [0001] The invention belongs to the technical field of manufacturing copper-clad laminates, and in particular relates to a method for preparing aluminum nitride-based ceramic copper-clad laminates. Background technique [0002] With high-efficiency, energy-saving, material-saving, and power-saving high-frequency power electronic devices and devices replacing traditional, low-efficiency, power-consuming, and material-consuming power frequency power electronic devices and devices, the current power electronics market requires a large number of IGBTs module. Due to the complex manufacturing process of IGBT chips, more than a dozen photolithography processes are required, so a single high-current chip cannot be made, so the multi-chip parallel technology has become the main technical measure for the development of IGBT modules to high current capacity. This requires a circuit board that can etch various graphic structures like a PCB board to realize parallel con...

Claims

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Application Information

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IPC IPC(8): C04B37/02
Inventor 李磊王怀义
Owner 李磊
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