Preparation method of aluminium nitride base ceramic copper-clad plate

Abstract

The invention belongs to the technical field of copper-clad plate manufacturing, and particularly relates to a preparation method of an aluminium nitride base ceramic copper-clad plate. The preparation method comprises the following steps: pretreating an oxygen-free red copper foil, then putting the pretreated oxygen-free red copper foil in molten sodium nitrate, and carrying out medium temperature chemical oxidation treatment; pretreating an aluminum nitride substrate, and then carrying out high-temperature oxidation treatment; and carrying out magnetron sputtering treatment on the aluminum nitride substrate subjected to high temperature oxidation, prepressing the treated oxygen-free red copper foil into a circular arc shape, stacking the circular arc-shaped oxygen-free red copper foil and the aluminum nitride substrate together, putting in a chained bonding furnace, carrying out high temperature dynamic continuous bonding, and then treating by adopting a sequential temperature difference alternative falling temperature method, thus obtaining the aluminium nitride base ceramic copper-clad plate. The preparation method is simple in production efficiency, stable in quality and low in cost. The prepared aluminium nitride base ceramic copper-clad plate has the characteristics of low void ratio, low coefficient of thermal expansion, low stress, high thermal conductivity, high peel strength and large bonding area.

Description

technical field [0001] The invention belongs to the technical field of manufacturing copper-clad laminates, and in particular relates to a method for preparing aluminum nitride-based ceramic copper-clad laminates. Background technique [0002] With high-efficiency, energy-saving, material-saving, and power-saving high-frequency power electronic devices and devices replacing traditional, low-efficiency, power-consuming, and material-consuming power frequency power electronic devices and devices, the current power electronics market requires a large number of IGBTs module. Due to the complex manufacturing process of IGBT chips, more than a dozen photolithography processes are required, so a single high-current chip cannot be made, so the multi-chip parallel technology has become the main technical measure for the development of IGBT modules to high current capacity. This requires a circuit board that can etch various graphic structures like a PCB board to realize parallel con...

AI Technical Summary

Problems solved by technology

Although aluminum oxide-based ceramic copper-clad laminates can meet the above basic requirements, their thermal conductivity is more than 6 times lower than that of aluminum nitride-based ceramic copper-clad laminates, and the thermal expansion coefficient is larger than that of aluminum nitride-based ceramic copper-clad laminates.

Because it is static sintering, the second batch of sintering can only be carried out after one batch of sintering, and before the second batch of sintering, the temperature in the furnace tube and the flow rate of nitrogen and oxygen atmosphere must be stabilized for a few minutes before the process parameters are stabilized before operation, so the production efficiency very low

Because it is static sintering, the oxygen-free red copper foil should be stacked flat on the aluminum nitride ceramic substrate from room temperature to high temperature quickly, and the temperature difference changes greatly in a short period of time. If the area of ​​the aluminum nitride substrate exceeds 40mm×40mm, in It is easy to absorb more heat in a short time, resulting in local sintering, delamination or void phenomenon

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