A temperature gradient control device and method for growing large-size silicon single crystal by zone melting method
A technology of temperature gradient and control device, which is applied in self-regional melting method, crystal growth, single crystal growth, etc., can solve the problems affecting the use of clamping mechanism, and achieve the effect of improving the crystal formation rate
Active Publication Date: 2016-06-15
GRINM SEMICONDUCTOR MATERIALS CO LTD
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Problems solved by technology
Taking the FZ-30 furnace as an example, if the original furnace body simply enlarges the reflector, due to the limited design of the furnace body, it will affect the use of the clamping mechanism and the operating line of sight
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Embodiment 1
[0025] 1. The main equipment and raw materials used in this embodiment are as follows:
[0026] Zone furnace: model: FZ-30; polysilicon: REC primary bar
[0027] High-purity argon: Dew point: -70°C Purity: >99.9993% Oxygen content ≤1ppma
[0028] Seed crystal: For the inspection standard, please refer to "Silicon Wafer Inspection Operation Procedures"
[0029] 2. The following are the specific steps of the production method of 6-inch fused silicon single crystal:
[0030] (1) Put the silicon rods into the zone furnace, vacuumize and fill with argon;
[0031] (2) Preheat silicon rod;
[0032] (3) Melting the silicon rod into a hemisphere, pressing down the silicon rod to weld the seed crystal;
[0033] (4) Thin neck: the seed crystal silicon rod goes down synchronously and lightly pulls the upper shaft to make the melting zone funnel-shaped;
[0034] (5) Shoulder placement: the seed silicon rods descend synchronously to form a full melting zone;
[0035] (6) Isometric gro...
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Abstract
The invention provides a temperature gradient control device for growing large-sized silicon single crystal with a zone-melting method and a temperature gradient control method. The temperature gradient control device comprises a temperature control reflector and a temperature control system, wherein the temperature control reflector is a cylindrical structure made of a graphite material, is arranged below a heating coil of a zone-melting furnace, and comprises a current input port and a current output port; the temperature control system comprises a temperature sensor and a master controller; the temperature control reflector is connected with the master controller through the current input port and the current output port. The method of utilizing the temperature gradient control device to control the temperature gradient of single crystal growth comprises the following steps: transmitting temperature signals in the reflector to the master controller, controlling the current in the temperature control reflector through the master controller, and further controlling the temperature in the reflector. The temperature control system is utilized to control the temperature in the reflector. In the large-diameter silicon single crystal drawing process, the temperature gradient control device can provide regulatory temperature gradient for silicon single crystal growth, so as to improve the crystal growing rate of the large-sized silicon single crystal.
Description
technical field [0001] The invention relates to a temperature gradient control device and method for growing large-size silicon single crystal by zone melting method. Background technique [0002] Silicon single crystal, as a semiconductor material, is generally used in the manufacture of integrated circuits and other electronic components. The growth of silicon single crystal by zone melting method is an important method. The silicon single crystal grown by the zone melting method has high purity and good uniformity, and is an excellent material for manufacturing power devices. [0003] In recent years, the diameter of zone-melted silicon single crystals has been increasing, six-inch single crystals have become the mainstream, and the technology of eight-inch single crystals has also been formed. As the diameter of the single crystal increases, the role of the reflector becomes more and more important, which has a direct impact on the pulling of the single crystal. [00...
Claims
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IPC IPC(8): C30B13/28C30B13/20C30B29/06
Inventor 曲翔
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD