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Fin-like back gate storage structure and automatic refreshing method of floating body cells

An automatic refresh and back gate technology, applied in electrical components, electrical solid-state devices, semiconductor devices, etc., can solve the problems of performance discount, waste of power consumption, etc., and achieve the effects of improved performance, reduced cost, and high integration.

Inactive Publication Date: 2014-05-28
SHANGHAI XINCHU INTEGRATED CIRCUIT
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

Such a refreshing process will waste a lot of power consumption, and during the re-storage process, DRAM cannot perform any other operations, which greatly reduces the performance of DRAM

Method used

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  • Fin-like back gate storage structure and automatic refreshing method of floating body cells
  • Fin-like back gate storage structure and automatic refreshing method of floating body cells
  • Fin-like back gate storage structure and automatic refreshing method of floating body cells

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Embodiment Construction

[0044] The present invention will be further described in detail with reference to the following specific embodiments and accompanying drawings. Except for the content specifically mentioned below, the process, conditions, experimental methods, etc. for implementing the present invention are all common knowledge and common knowledge in the field, and the present invention is not particularly limited.

[0045] The present invention is based on a storage structure of a fin-shaped back gate, Figure 4 It is a perspective view of a storage structure of a fin-shaped back gate according to the present invention; Figure 5 It is an interface diagram of a storage structure of a fin-shaped back gate of the present invention; such as image 3 As shown, wherein 1-substrate, 2-source and drain, 3-gate oxide layer, 4-fin gate, 5-floating body unit, 6-insulation layer, 7-back gate oxide layer, 8-back gate; 9-fin transistor, 10-floating gate structure.

[0046] The fin transistor 9 is a n...

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Abstract

The invention provides a fin-like back gate storage structure and an automatic refreshing method of floating body cells. A back gate is arranged on the upper surface of a substrate, a back gate?oxide layer is arranged on the upper surface of the back gate, and a floating gate structure is arranged on the back gate?oxide layer. Data writing can be finished with small voltage. As the automatic floating body cell refreshing technology is adopted, the maintaining time is greatly increased, power consumption is significantly reduced, and integration is high as the size of the storage cell is excessively small. A static random access memory whose single tube storage structure replaces the original six-tube memory cell can greatly reduce the area of CMOS processer chip and is applied to a technology node of no less than 28 / 20 / 14nm, the cost is reduced obviously, and the power consumption is significantly reduced.

Description

technical field [0001] The invention relates to a semiconductor device structure and a preparation technology thereof, in particular to a storage structure of a fin-shaped back gate and an automatic refresh method of a floating body unit thereof. Background technique [0002] Memory components developed by using semiconductor technology, such as dynamic random access memory (DRAM), static random access memory (SRAM), non-volatile memory (NVM), etc., are now widely used in various electronic products. With the development of Moore's Law (Moore's Law), the size of memory elements is getting smaller and smaller, so that the number of transistors that can be accommodated per unit area is increasing and the speed is getting faster and faster. Because the reading speed of DRAM and SRAM is very fast, they are also gradually integrated into the system-on-chip to achieve higher integration and performance. Taking a quad-core processor chip from Intel as an example, the system embeds...

Claims

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Application Information

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IPC IPC(8): H01L27/115H01L29/423
Inventor 亢勇陈邦明
Owner SHANGHAI XINCHU INTEGRATED CIRCUIT
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