A Narrow Pulse Width High Peak Power Pulse Semiconductor Laser Driving Circuit

Abstract

The invention discloses a narrow-pulse width high-peak value power pulse type semiconductor laser drive circuit which comprises a resistor R1, a resistor R2, a resistor R3, a resistor R4, a resistor R5, a resistor R6, a resistor R7, a capacitor C1, a capacitor C2, a diode D1, a diode D2, a transformation transducer T1, a triode transistor N1, a triode transistor N2 and a semiconductor laser LD1, wherein the resistor R3, the resistor R5, the triode transistor N2, the diode D1, the resistor R4 and the transformation transducer T1 in the circuit form a trigger circuit, and the resistor R1, the resistor R2, the resistor R6, the resistor R7, the triode transistor N1, the diode D2, the capacitor C2, the capacitor C1 and the semiconductor laser LD1 form a semiconductor laser pulse drive circuit. The narrow-pulse width high-peak value power pulse type semiconductor laser drive circuit disclosed by the invention can realize a plurality of ns-grade narrow-pulse width high-peak value power laser pulses, and solves the problems of the conventional bipolar type, metal oxidation field effect transistor drive circuits, such as small drive current and low drive speed.

Description

technical field [0001] The invention relates to a pulsed semiconductor laser drive circuit. Background technique [0002] The pulsed semiconductor laser drive circuit can drive the semiconductor laser to generate pulsed laser, which can be applied to distributed Raman fiber temperature sensors, pulsed laser range finders and other fields. In the distributed Raman fiber optic temperature sensor, the smaller the pulse width of the pump laser pulse, the higher the temperature spatial resolution that the system can achieve. For the pulsed laser range finder, the smaller the pulse width of the emitted laser, the higher the distance measurement accuracy can be achieved. The narrowing of the laser pulse width means the reduction of the laser pulse energy. In order not to affect the range measurement of the system and maintain the necessary pulse energy, it is necessary to increase the peak power of the laser pulse. Therefore, the laser pulse light source with high peak power and ...

AI Technical Summary

Problems solved by technology

The general driving circuit based on bipolar triode and metal oxide field effect transistor is difficult to realize the narrow pulse width laser pulse with a half pulse width of several ns level under such a large driving current due to the large junction capacitance and other reasons. Narrow half pulse width generally exceeds 20ns

Although the pulsed fiber laser can generally amplify the seed light with low peak power and narrow pulse width through an optical amplifier to achieve a few ns-level narrow pulse width and high peak power laser pulse, but its cost is high and the volume is large.

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