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Open-loop power self-control crystal growth control method without temperature signal treatment

A crystal growth control and temperature signal technology, applied in crystal growth, single crystal growth, single crystal growth, etc., can solve problems such as abnormal power fluctuations, crystal growth failure, etc., to improve continuity, improve product yield, and improve production efficiency effect

Inactive Publication Date: 2014-06-04
MAANSHAN MINGXIN ELECTRICAL SCI & TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The present invention mainly proposes an open-loop power self-controlled crystal production system without temperature signal processing, which solves the crystal growth failure caused by abnormal power fluctuations and temperature shocks during the growth of single crystal silicon rods, and greatly improves the continuous production of crystal silicon rods ,Increase productivity

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  • Open-loop power self-control crystal growth control method without temperature signal treatment
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  • Open-loop power self-control crystal growth control method without temperature signal treatment

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Embodiment Construction

[0019] An open-loop power self-controlled crystal growth control method without temperature signal processing, including a power open-loop control system for shouldering process steps and a power open-loop control system for equal-diameter process steps;

[0020] The power open-loop control system of the shoulder-releasing process step is composed of a power slope setting programming, a power control unit

[0021] element composition;

[0022] Shouldering power slope setting programming is performed according to the shouldering time, and the on-site engineer can set the program according to the thermal field conditions of the hearth and production regulations.

[0023] During the shouldering process, the operator can adjust the pulling speed according to the actual situation to control the crystal shouldering speed.

[0024] The power open-loop control system of the equal-diameter process step is composed of a power slope and setting pulling speed programming, a power control...

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Abstract

The invention discloses an open-loop power self-control crystal growth control method without temperature signal treatment. In the method, a power open loop control system of a shoulder putting process step and a power open loop control system of an equal-diameter process step are utilized, a direct control power control mode is adopted to avoid signal evaluation and treatment of a temperature signal tester, a power control module is directly adopted to perform a closed loop control mode and supplement each other with a diameter casting speed closed loop control mode in order to form a unique crystal power control mode, thereby effectively solving the condition of crystal growth failure resulting from abnormal power fluctuation and temperature impact in a monocrystalline silicon rod growth process, greatly improving the continuity of the monocrystalline silicon rod, improving the production efficiency, perfecting the anti-interference performance, reducing the production cost (about 25%) and greatly improving the yield of the product (about 32%).

Description

technical field [0001] The invention relates to the field of CZ Czochralski single crystal furnace control system manufacturing, in particular to an open-loop power self-controlled crystal growth control method without temperature signal processing. Background technique [0002] In daily life, silicon single crystal can be said to be ubiquitous. Crystalline silicon is an indispensable raw material for televisions, computers, telephones, refrigerators, watches, automobiles, space shuttles, spaceships, satellites, etc. In particular, it marks the beginning of the green energy revolution—the invention and application of solar cells, which not only indicates that the utilization of solar crystalline silicon will be popularized all over the world, but also indicates that the demand for silicon materials will increase day by day. Because of the various advantages of silicon single crystal, the demand for silicon single crystal growth equipment and control system has increased rap...

Claims

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Application Information

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IPC IPC(8): C30B15/22C30B29/06
Inventor 马四海刘长清张笑天马青丁磊
Owner MAANSHAN MINGXIN ELECTRICAL SCI & TECH