Semiconductor device and method of manufacturing the same

Abstract

A semiconductor device and a manufacturing method thereof are disclosed. The manufacturing method of the semiconductor device comprises: forming a semiconductor fin on a semiconductor substrate; forming an interface oxide layer on the top surface and side walls of the semiconductor fin; forming a high-K gate dielectric on the interface oxide layer; forming a first metal gate layer on the dielectric; implanting dopants into the first metal gate layer by conformal doping; and performing annealing to diffuse and accumulate the dopants between the high-K gate dielectric and the first metal gate layer and the lower interface between the high-K gate dielectric and the interface oxide, and electric dipoles are generated through interfacial reactions at the lower interface between the high-K gate dielectric and the interface oxide.

Description

technical field [0001] The invention relates to the field of semiconductor technology, in particular to a semiconductor device including a metal gate and a high-K gate dielectric and a manufacturing method thereof. Background technique [0002] With the development of semiconductor technology, the feature size of Metal Oxide Semiconductor Field Effect Transistor (MOSFET) keeps decreasing. The scaling down of MOSFETs leads to a serious problem of gate current leakage. The use of a high-K gate dielectric makes it possible to increase the physical thickness of the gate dielectric while keeping the equivalent oxide thickness (EOT) constant, thereby reducing the gate tunneling leakage current. However, conventional polysilicon gates are not compatible with high-K gate dielectrics. The use of metal gates and high-K gate dielectrics can not only avoid the depletion effect of polysilicon gates, reduce gate resistance, but also avoid boron penetration and improve device reliability...

AI Technical Summary

Problems solved by technology

Therefore, the method for manufacturing a semiconductor device including a double metal gate and a double gate dielectric is complex and unsuitable for mass production, which further leads to high cost

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