Etching solution concentration measurement device and etching solution concentration measurement method

A technology of concentration measurement and etching solution, applied in the field of etching solution, can solve the problems of affecting light absorption, rework repair, affecting the measured value of acid concentration, etc., and achieve the effect of overcoming measurement interference and saving resources

Active Publication Date: 2014-06-18
SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
View PDF5 Cites 7 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Over time, a lingering acid mist will be formed in the negative pressure closed system of the online optical concentration measurement mechanism, and the acid mist will affect the absorption of light and then affect the surface of the sample cell 230 or reference cell 240. Measured value of acid concentration
That is, the measured acid concentration will be lower or higher than the actual value, resulting in too much or insufficient acid replenishment in the acid replenishment system, and eventually the acid concentration in the etching solution will be too high or too low, resulting in large batches of bad etching and rework Repair, causing significant loss to production
In practical application, in order to overcome this atomization phenomenon, it is necessary to regularly disassemble the online optical concentration measuring mechanism or wipe the measuring pool, which not only destroys the precision of the measuring mechanism, but also damages the online optical concentration measuring mechanism after reinstallation. It needs to be recalibrated before it can be put into use, which causes a lot of inconvenience to actual production

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Etching solution concentration measurement device and etching solution concentration measurement method
  • Etching solution concentration measurement device and etching solution concentration measurement method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific implementation manners of the present invention will now be described in detail with reference to the accompanying drawings.

[0029] Such as figure 1 As shown, the etching solution concentration measurement device provided by the preferred embodiment of the present invention includes an acid mist elimination mechanism 1 , a concentration measurement mechanism 2 and a supply tank 3 . Wherein the supply tank 3 is filled with etching solution, and is used for real-time online supply of etching solution for the concentration measurement mechanism 2, and the acid mist elimination mechanism 1 is connected with the concentration measurement mechanism 2, and is used to eliminate the acid mist inside the concentration measurement mechanism 2, so that the concentration Measuring mechanism 2 measures the absorbance of each acid in the etching liquid mixe...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to an etching solution concentration measurement device and an etching solution concentration measurement method. The measurement device comprises a concentration measurement mechanism and an acid mist removing mechanism connected with the concentration measurement mechanism, wherein the acid mist removing mechanism is used for removing acid mist inside the concentration measurement mechanism, the concentration measurement mechanism is used for receiving etching solution in real time, measuring absorbance of all acids of mixed acid of the etching solution in a no-acid-mist environment, and calculating the concentrations of all acids in the mixed acid of the etching solution according to the absorbance. The concentration measurement device overcomes the interference of the acid mist to the measurement of acid concentration of the mixed acid of the etching solution, so as to rapidly and accurately determine the concentrations of all acids of the mixed acid of the etching solution in an online manner; drying gas can be used circularly and the purpose of saving resources is achieved.

Description

technical field [0001] The invention relates to the technical field of etching liquid, and more specifically, relates to an etching liquid concentration measuring device and method. Background technique [0002] Wet etching is the core process of patterning the metal film layer with an acidic etching solution in the TFT manufacturing process, and then forming the gate (Gate), source-drain (Source-Drain), and pixel (Indium Tin Oxides, ITO) electrodes. Among them, aluminum and molybdenum are often used as conductive materials to form gates. Various acids can be used for the etching solution, but most of them use strong acid mixtures (phosphoric acid, nitric acid, and glacial acetic acid) to dissolve and redox them. Patterning of the gate film layer. [0003] The composition of the mixed acid of the etching solution is generally phosphoric acid (70-72%), nitric acid (1.8-2.0%), and acetic acid (9.5-10.5%). Among them, nitric acid plays the role of providing H 3 o + The role ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/31
CPCG01N21/31
Inventor 徐蕊张维维
Owner SHENZHEN CHINA STAR OPTOELECTRONICS TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products