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A kind of dendritic zno nanowire array structure material and its preparation method and application

A nanowire array, dendritic technology, applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., can solve problems such as being unsuitable for large-scale production, and achieve large-scale production. Easy-to-use effects

Active Publication Date: 2017-01-04
PEKING UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this method is not suitable for large-scale production

Method used

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  • A kind of dendritic zno nanowire array structure material and its preparation method and application
  • A kind of dendritic zno nanowire array structure material and its preparation method and application
  • A kind of dendritic zno nanowire array structure material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Example 1 Preparation of Dendritic Hierarchical ZnO Nanowire Array Structure Material

[0026] (1) Put the blank FTO conductive glass in acetone and alcohol for 10 minutes, then rinse with deionized water and dry.

[0027] (2) Preparation of primary ZnO nanowire arrays:

[0028] 0.15mol / L of Zn(NO 3 ) 2 solution and (CH 2 ) 6 N 4 The solutions are mixed in equal volumes, and the pre-cleaned FTO conductive glass is inserted into the mixed solution at an angle of 45°. Seal it and put it in a constant temperature drying oven at 95°C. After reacting at a constant temperature for 4 hours, take it out, rinse it with deionized water and dry it. The primary ZnO nanowire array SEM and XRD structures were prepared as figure 1 and image 3 (b).

[0029] (3) Take an appropriate amount of 0.25mol / L Zn(CH 3 COO) 2 The colloid is placed on the FTO conductive glass that has grown the primary ZnO nanowire array, and the conductive glass is placed on a desktop glue homogenizer...

Embodiment 2

[0033] Dendritic ZnO nanowire array structure materials were prepared according to the method in Example 1. The difference is that:

[0034] 1) In step 2), the temperature of the hydrothermal reaction is 120° C., and the time is 3 hours; the concentrations of zinc nitrate and hexamethylenetetramine in the mixed solution are both 0.2 mol / L.

[0035] 2) In step 3), the Zn(CH 3 COO) 2 The colloid concentration is 0.3mol / L;

[0036] 3) In step 4), the hydrothermal synthesis temperature is 120° C.; the hydrothermal reaction time is 2 h; the concentrations of zinc nitrate and hexamethylenetetramine in the mixed solution are both 0.07 mol / L.

Embodiment 3

[0038] Dendritic ZnO nanowire array structure materials were prepared according to the method in Example 1. The difference is that:

[0039] 1) In step 2), the temperature of the hydrothermal reaction is 80° C., and the time is 2 hours; the concentrations of zinc nitrate and hexamethylenetetramine in the mixed solution are both 0.1 mol / L.

[0040] 2) In step 3), the Zn(CH 3 COO) 2 The colloid concentration is 0.3mol / L;

[0041] 3) In step 4), the hydrothermal synthesis temperature is 80°C; the hydrothermal reaction time is 2h; the concentrations of zinc nitrate and hexamethylenetetramine in the mixed solution are both 0.02mol / L.

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Abstract

The invention relates to a preparation method of a dendritic ZnO nanowire array structural material. The method comprises the following steps: growing a primary ZnO nanowire array structure on a blank conducting glass substrate in a hydrothermal manner; loading a layer of ZnO nanoparticles onto the primary ZnO nanowire array structure through a colloid modification process; carrying out a second hydrothermal reaction by taking the modified primary ZnO nanowire array structure as a working electrode to obtain the dendritic ZnO nanowire array structural material. The preparation method disclosed by the invention has the advantages of simple equipment, convenience in operation, mild reaction condition and the like, the production cost is reduced greatly, and scale production is facilitated.

Description

technical field [0001] The invention relates to a dendritic ZnO nanowire array structure material and a preparation method and application thereof, belonging to the field of nanomaterial energy. Background technique [0002] The one-dimensional ZnO nanowire array structure is considered to be one of the important materials to form a new generation of nano-devices due to the coupling of ZnO's excellent optical, electrical, mechanical properties and one-dimensional nanostructure. At present, gas sensors, light-emitting diodes, nanolasers, nanogenerators and solar cells based on the one-dimensional ZnO nanowire array structure have been successfully developed. and research hotspots in materials science. As photoanode materials for dye-sensitized solar cells, one-dimensional ZnO nanowire or nanorod arrays and two-dimensional ZnO nanosheet arrays have been extensively studied. Although the photoanode with this type of array structure has a fast straight-line electron transport ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G9/042H01G9/20B82Y30/00B82Y40/00
Inventor 王习东陈燕邱建航郭敏刘丽丽
Owner PEKING UNIV