Single-layer film-loaded four-layer substrate microstrip-microstrip interconnect structure

Abstract

Provided is a single-layer membrane loading type four-layer substrate micro-strip-micro-strip connecting structure. Low-reflection and low-loss transmission of microwave signals between layers in a four-layer medium substrate is achieved. The structure comprises four medium layers, a metal layer is arranged between every two medium layers, micro-strip wires are arranged on a first medium layer at the top layer and a fourth medium layer at the bottom layer, and the micro-strip wires are connected with signal through holes of the metal layers by penetrating through the medium layers vertically. Metal through hole columns are evenly distributed in the two sides of each micro-strip wire. Metal through holes are formed around the signal through holes according to a circular array in a distributing mode. The structure is characterized in that metal hole reverse welding discs are arranged at the positions where the signal through holes penetrate through the metal layers, the circular centers of the metal hole reverse welding discs are on the center lines of the signal through holes, and matched membranes are arranged on the signal through holes in the middle metal layer.

Description

technical field [0001] The invention relates to a microstrip-microstrip interconnection structure loaded by a single-layer diaphragm, which is suitable for microwave circuits with four-layer substrates. Background technique [0002] In multilayer board circuits, vertical metallized via structures are generally used to realize the interlayer interconnection of microwave signals in multilayer board circuits and the interconnection between integrated circuit devices. However, the vertical metallized via structure will show a discontinuity effect in the microwave and even higher frequency bands, causing strong electromagnetic radiation and coupling. Placing some metal vias around the microwave signal hole is a common method to provide return current to eliminate the resonance phenomenon between the metal layers of the substrate. [0003] For the existing technology, when realizing the multilayer circuit technology, LTCC (low temperature co-fired ceramic technology) is often use...

AI Technical Summary

Problems solved by technology

[0003] For the existing technology, when realizing the multilayer circuit technology, LTCC (low temperature co-fired ceramic technology) is often used. The interconnection structure based on LTCC technology is generally more complicated, and the requirements for the process level are relatively high. During the firing process, the multilayer board Warpage deformation often causes changes in the interconnection structure and affects the performance of the overall circuit

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