Si substrate field effect transistor terahertz detector antenna based on CMOS manufacturing process

Abstract

The invention discloses a Si substrate field effect transistor terahertz detector antenna based on a CMOS manufacturing process, and belongs to the field of antennas. The Si substrate field effect transistor terahertz detector antenna comprises a semi-circular micro-strip patch antenna body with a T-shaped groove, a silicon substrate FET and a low-noise amplifier; the semi-circular micro-strip patch antenna body is used for receiving THz waves, converting the received THz waves into electric signals, and sending the electric signals to the FET, the FET converts high-frequency signals into low-frequency signals and sends the low-frequency signals to the low-noise amplifier, and detection of THz signals can be finally achieved after the signals are amplified by the low-noise amplifier. The Si substrate field effect transistor terahertz detector antenna has important application in the fields of security scanning, radio astronomy, biologic remote sensing, production monitoring and the like.

Description

Technical field [0001] The present invention relates to antenna technology and terahertz technology, in particular to microstrip patch antenna technology. Background technique [0002] Terahertz (THz) waves refer to electromagnetic waves with a frequency in the range of 0.1THz to 10THz, with a wavelength in the range of 0.03mm to 3mm, between millimeter waves and infrared, which is generally considered to be the boundary area between electronics and optics. However, due to the high loss of THz waves in the air, a high-gain emission source and a sufficiently sensitive detection antenna are required, making it impossible to commercialize it in the communication field and restricting the development of technology. Therefore, this frequency band is a white space to be developed. , Also known as THz gap. [0003] Because terahertz waves have the characteristics of transient, broadband, high time and space coherence, low energy and unique transmission characteristics, they are used in s...

AI Technical Summary

Problems solved by technology

When these detectors are further developed into imaging equipment, there are often the following problems: first, additional processes and equipment, such as small machinery, etc. need to be added; second, the thermal relaxation time constant of the thermal effect detector limits the imaging process. rate

However, the terahertz wave detector based on Si-based field-effect transistor (FET) inversion layer plasma can overcome the above shortcomings, and realize THz imaging from a single CMOS field-effect transistor through a focal plane array (FPA), which has greater advantages. However, domestic research in this area is still in its infancy.

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