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Radiation-resistant bipolar device based on emitter electrode contact mode and preparation method of the bipolar device

A technology of emitter electrodes and bipolar devices, applied in the field of electronics, can solve problems such as the decline of electrical performance indicators, and achieve the effects of simple manufacturing process, suppression of ionization and displacement effects, and fewer steps

Active Publication Date: 2016-09-14
HARBIN INST OF TECH +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0007] The present invention aims to solve the problem that the existing bipolar devices will produce ionization and displacement effects in the space radiation environment, and the electrical performance index of the bipolar devices will decline after being damaged by radiation. According to the bipolar device and the preparation method of the bipolar device

Method used

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  • Radiation-resistant bipolar device based on emitter electrode contact mode and preparation method of the bipolar device
  • Radiation-resistant bipolar device based on emitter electrode contact mode and preparation method of the bipolar device
  • Radiation-resistant bipolar device based on emitter electrode contact mode and preparation method of the bipolar device

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specific Embodiment approach 1

[0022] Specific implementation mode one: refer to figure 2 This implementation mode is described in detail. In this implementation mode, a radiation-resistant bipolar device based on the emitter electrode contact method is described. The metal layer of the bipolar device is connected to the emitter region by using a heterojunction characteristic material to enhance the electrode structure.

[0023] After bipolar devices (especially NPN bipolar transistors) are damaged by irradiation, the positive charge captured by the oxide will cause the emitter junction (N + P junction) and the depletion layer on the surface of the base region expand to the base region (N-type region), increasing the recombination current in the depletion layer, resulting in the excess base current △I of the bipolar device B (base current minus initial base current after irradiation) increases, which affects the reliability and life of bipolar devices. Schematic diagram of the extended structure of the de...

specific Embodiment approach 2

[0025] Embodiment 2: This embodiment is a further description of the radiation-resistant bipolar device based on the emitter electrode contact method described in Embodiment 1. In this embodiment, the heterojunction characteristic material enhances the electrode The structure includes: polysilicon and metal silicide, the shape of the polysilicon is hemispherical, the metal silicide covers the upper surface of the polysilicon, and the polysilicon contains dopant atoms.

[0026] In this embodiment, a metal compound with excellent conductivity (such as metal silicide) is first formed on the emitter region, and then the metal compound is connected to the emitter region by forming polycrystalline silicon grains, so that the sheet resistance of the improved bipolar device is reduced .

specific Embodiment approach 3

[0027] Specific embodiment three: this embodiment is a further description of the radiation-resistant bipolar device based on the emitter electrode contact method described in specific embodiment two. In this embodiment, the dopant atoms in the polysilicon and The dopant atoms in the emitter region of a bipolar device are of the same type.

[0028] In this embodiment, the dopant atoms in the enhanced electrode structure of the heterojunction material are of the same type as the dopant atoms in the emitter region of the bipolar device. For example, if the emitter region contains N-type dopant atoms, the dopant atoms in the heterojunction characteristic material enhanced electrode structure are also N-type dopant atoms. The reason for using this process is to enhance the emission region and the heterojunction characteristic material. Good electrical conductivity between the electrode structures results.

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Abstract

The invention belongs to a radiation-resistant bipolar device based on an emitting electrode contact mode and a preparing method for the bipolar device and belongs to the technical field of electronics. The problem that due to the fact that the ionization and movement effect can be generated through an existing bipolar device under the space radiation environment, after the bipolar device is damaged due to irradiation, the electrical performance index declines is solved. According to the radiation-resistant bipolar device based on the emitting electrode contact mode, connection conducted in the manner that polycrystalline silicon is connected with a metal layer and a launching zone of the bipolar device is adopted, so that the purposes that ionization and movement radiation damage are avoided through the bipolar device under the space radiation environment are achieved. According to the preparing method for the radiation-resistant bipolar device based on the emitting electrode contact mode, a traditional bipolar device preparation technology is reserved and the bipolar device capable of greatly reducing radiation damage is prepared. The radiation-resistant bipolar device based on the emitting electrode contact mode and the preparing method for the radiation-resistant bipolar device based on the emitting electrode contact mode are suitable for the radiation resistance reinforcing technology of the bipolar device.

Description

technical field [0001] The invention belongs to the field of electronic technology, in particular to an anti-radiation bipolar device. Background technique [0002] The space radiation environment can cause ionization and displacement effects in bipolar devices. The ionization effect is mainly on the SiO 2 passivation layer damage, and the SiO 2 The / Si interface generates interface states, thereby affecting the electrical performance parameters of bipolar devices. Effects of ionizing radiation on SiO 2 Electron-hole pairs are generated in the layer. The resulting electron mobility is greater and most of it moves out of the passivation layer. A fraction of the electrons recombine with the holes before they are removed. The mobility of holes is slow, except for the holes recombined with electrons, the rest are covered by SiO 2 Layer defect trapping, forming trapped positive charges, and then introducing SiO at the interface 2 / Si interface state. SiO 2 Trapped posit...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/73H01L29/47H01L21/331H01L21/28
CPCH01L21/28H01L29/41708H01L29/66272H01L29/7325
Inventor 李兴冀王敬贤刘超铭刘文宝杨剑群季轩田智文何世禹
Owner HARBIN INST OF TECH
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