Electric injection surface plasma micro-nano structure waveguide output laser source of coplanar electrode

A surface plasmon, coplanar electrode technology, applied in phonon exciters, circuits, electrical components, etc., can solve problems such as external

Active Publication Date: 2014-06-25
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
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  • Application Information

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Problems solved by technology

[0007] The present invention aims to overcome the problem that the surface plasmon lasers in the prior art nee

Method used

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  • Electric injection surface plasma micro-nano structure waveguide output laser source of coplanar electrode
  • Electric injection surface plasma micro-nano structure waveguide output laser source of coplanar electrode
  • Electric injection surface plasma micro-nano structure waveguide output laser source of coplanar electrode

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Embodiment 1

[0037] In this embodiment, the semiconductor active material and the two circular ion implantation regions adopt InGaAsP multiple quantum well material with a refractive index of 3.3, a thickness of 205nm and a waveguide width of 1500nm; the metal is Ag with a refractive index of 0.514-10.8i, and the The thickness is 250nm, the width of the silver strip is 1500nm; the insulating layer is MgF 2 The refractive index is 1.38 and the thickness is 20nm.

[0038] In this example, the COMOSL3D Eigenfrequency module is used for simulation experiments. Here we use air instead of figure 1 Middle area 4 and 5, in order to simplify the calculation amount of the simulation experiment, the parameters are set as above. The electric field along the depth Z direction in the subwavelength cavity is strongly confined to 20nm MgF 2 layer, such as figure 2 As shown, surface plasmon resonance is formed. The distribution of the electric field and its components in the simulation results is as f...

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Abstract

The invention relates to the field of micro-nano photoelectron and laser technologies and photoelectron integration and provides an electric injection surface plasma micro-nano structure waveguide output laser source of a coplanar electrode, wherein the laser source is suitable for on-chip integration. The laser source comprises a semiconductor active layer, an insulating medium layer and a metal film layer. The metal film layer and the semiconductor active layer are spaced by the insulating medium layer, a metal strip-shaped waveguide is formed on the metal film layer, a semiconductor strip-shaped waveguide and two carrier injection areas are manufactured on the semiconductor active layer, the metal strip-shaped waveguide and the semiconductor strip-shaped waveguide are perpendicular to each other, and surface plasma sub-wavelength cavities are formed in the MIS structure in the intersection position. The two carrier injection areas are located over the metal strip-shaped waveguide and serve as one part of the sub-wavelength cavities. Transverse electric injection is achieved on the semiconductor active layer to perform pumping. According to the laser source, metal absorption loss is counteracted through semiconductor high-gain material to achieve excitation and emission of light in microcavities, and finally the light is coupled to enter the semiconductor waveguide to be output.

Description

technical field [0001] The invention belongs to the field of micro-nano optoelectronics and laser technology and optoelectronic integration, and in particular relates to a coplanar electrode electric injection surface plasmon micro-nano structure waveguide output laser source. Background technique [0002] In optical communication systems, optoelectronic integrated devices have gradually become a major research hotspot due to their advantages of low power consumption, ultra-wideband and high modulation speed, and have made some progress in recent years. However, after decades of rapid development of traditional microelectronics technology, its feature size has approached the physical limit. Therefore, with the advancement of semiconductor micro-nano processing technology, people are turning more research focus to optoelectronic integration. [0003] The on-chip integrated light source is the core component in the optical communication system. Compactness and low power cons...

Claims

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Application Information

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IPC IPC(8): H01S4/00
Inventor 郑婉华张斯日古楞王宇飞祁帆冯志刚刘磊冯鹏赵鹏超
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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