Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof
A technology of lasers and semiconductors, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of difficult p-side down packaging, etc., and achieve the effects of easy integration, extended life, and enhanced heat dissipation
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[0034] The specific implementation process of the first embodiment includes:
[0035] Step 1. Prepare the base material layer 1, and grow the upper metal layer 2 and the lower metal layer 3 on the upper and lower surfaces of the base material layer 1, and the side surface of the base material layer 1 is not plated with a metal layer to ensure that the upper metal layer 2 and the lower metal layer The metal layer 3 is disconnected.
[0036] Step 2, preparing an insulating isolation groove, and separating the upper metal layer 2 into a first positive electrode 4, a second positive electrode 5 and a negative electrode 6 through the insulating isolation groove;
[0037] Step 3, plating the solder layer 8 on the first positive electrode 4 and the second positive electrode 5, connect the first positive electrode 4 to the ridge waveguide area of the semiconductor laser 7 through the solder layer 8, and make the second positive electrode 5 through the solder The layer 8 is connected to th...
Example Embodiment
[0040] The second embodiment is based on the first embodiment, specifically a method of p-side down packaging of a GaAs-based p-electrode separated semiconductor laser chip. It uses silicon nitride ceramics as the material of the base material layer, and the size of the base material layer is 5.5mm×4.5mm×1mm. The upper metal layer and the lower metal layer are made of titanium gold, titanium platinum or gold germanium nickel with a total thickness of 1um. Gold, and using a solder layer of gold-tin material to separate the p-electrode and sinter the semiconductor laser chip p face down on the heat sink. The implementation process mainly includes the following steps:
[0041] Step A, using a magnetron sputtering method to sputter titanium gold, titanium platinum or gold germanium nickel gold with a thickness of 1 um on the upper and lower surfaces of the silicon nitride ceramic base material layer as the metal layer, and the side surface of the base material layer is not plated The...
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