Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof

Abstract

The invention relates to a heat sink used for downward encapsulation of the p side of a semiconductor laser unit. The heat sink comprises a basis material layer, an upper metal layer and a lower metal layer, wherein the upper metal layer and the lower metal layer are grown on the upper surface of the basis material layer and on the lower surface of the basis material layer respectively, the upper metal layer is divided into a first positive electrode, a second positive electrode and a negative electrode which are independent of one another by insulation and isolation layers, the first positive electrode is used for providing electric signals needed by working of a ridged waveguide area of the semiconductor laser unit, the second positive electrode is used for providing electric signals needed by working of a conical gain area of the semiconductor laser unit, and the negative electrode is connected with the electrode on the n side of the semiconductor laser unit. By the adoption of the heat sink, downward encapsulation of the p side of the semiconductor laser unit provided with a p electrode separated structure can be achieved easily, electric signals can be injected into the separated p electrode independently, the radiating capacity of the semiconductor laser unit is improved, the service life of the semiconductor laser unit is prolonged, and the laser unit is made to be integrated with a system easily.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a heat sink for realizing p-side-down packaging of a semiconductor laser with a p-electrode separation structure and a method for manufacturing the heat sink. Background technique [0002] With the continuous development of science and technology, semiconductor lasers with high output power and good beam quality have very important applications in fields such as medical and health care, biological imaging, laser display, optically pumped solid-state lasers, nonlinear optics, and optical fiber communications. The end-emitting mode-locked semiconductor laser with tapered waveguide structure can provide higher output power and better beam quality, and can realize single-mode output. A tapered mode-locked semiconductor laser usually consists of two parts: a ridge-shaped waveguide region and a tapered gain region. The ridge-shaped waveguide area is used for mode filtering to achie...

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a heat sink for p-side-down packaging of semiconductor lasers and its manufacturing method, which is used to solve the difficulty in realizing p-side-down due to the existence of the p-electrode separation structure in the prior art. encapsulation problem

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