Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof

A technology of lasers and semiconductors, which is applied in the direction of semiconductor lasers, lasers, laser components, etc., can solve the problems of difficult p-side down packaging, etc., and achieve the effects of easy integration, extended life, and enhanced heat dissipation

Active Publication Date: 2014-06-25
BEIJING PEONY ELECTRONICS GROUP CORP
View PDF5 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide a heat sink for p-side-down packaging of semiconductor lasers and its manufacturing met

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof
  • Heat sink used for downward encapsulation of p side of semiconductor laser unit and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0034] The specific implementation process of the first embodiment includes:

[0035] Step 1. Prepare the base material layer 1, and grow the upper metal layer 2 and the lower metal layer 3 on the upper and lower surfaces of the base material layer 1, and the side surface of the base material layer 1 is not plated with a metal layer to ensure that the upper metal layer 2 and the lower metal layer The metal layer 3 is disconnected.

[0036] Step 2, preparing an insulating isolation groove, and separating the upper metal layer 2 into a first positive electrode 4, a second positive electrode 5 and a negative electrode 6 through the insulating isolation groove;

[0037] Step 3, plating the solder layer 8 on the first positive electrode 4 and the second positive electrode 5, connect the first positive electrode 4 to the ridge waveguide area of ​​the semiconductor laser 7 through the solder layer 8, and make the second positive electrode 5 through the solder The layer 8 is connected to th...

Example Embodiment

[0040] The second embodiment is based on the first embodiment, specifically a method of p-side down packaging of a GaAs-based p-electrode separated semiconductor laser chip. It uses silicon nitride ceramics as the material of the base material layer, and the size of the base material layer is 5.5mm×4.5mm×1mm. The upper metal layer and the lower metal layer are made of titanium gold, titanium platinum or gold germanium nickel with a total thickness of 1um. Gold, and using a solder layer of gold-tin material to separate the p-electrode and sinter the semiconductor laser chip p face down on the heat sink. The implementation process mainly includes the following steps:

[0041] Step A, using a magnetron sputtering method to sputter titanium gold, titanium platinum or gold germanium nickel gold with a thickness of 1 um on the upper and lower surfaces of the silicon nitride ceramic base material layer as the metal layer, and the side surface of the base material layer is not plated The...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to a heat sink used for downward encapsulation of the p side of a semiconductor laser unit. The heat sink comprises a basis material layer, an upper metal layer and a lower metal layer, wherein the upper metal layer and the lower metal layer are grown on the upper surface of the basis material layer and on the lower surface of the basis material layer respectively, the upper metal layer is divided into a first positive electrode, a second positive electrode and a negative electrode which are independent of one another by insulation and isolation layers, the first positive electrode is used for providing electric signals needed by working of a ridged waveguide area of the semiconductor laser unit, the second positive electrode is used for providing electric signals needed by working of a conical gain area of the semiconductor laser unit, and the negative electrode is connected with the electrode on the n side of the semiconductor laser unit. By the adoption of the heat sink, downward encapsulation of the p side of the semiconductor laser unit provided with a p electrode separated structure can be achieved easily, electric signals can be injected into the separated p electrode independently, the radiating capacity of the semiconductor laser unit is improved, the service life of the semiconductor laser unit is prolonged, and the laser unit is made to be integrated with a system easily.

Description

technical field [0001] The invention relates to the field of semiconductor lasers, in particular to a heat sink for realizing p-side-down packaging of a semiconductor laser with a p-electrode separation structure and a method for manufacturing the heat sink. Background technique [0002] With the continuous development of science and technology, semiconductor lasers with high output power and good beam quality have very important applications in fields such as medical and health care, biological imaging, laser display, optically pumped solid-state lasers, nonlinear optics, and optical fiber communications. The end-emitting mode-locked semiconductor laser with tapered waveguide structure can provide higher output power and better beam quality, and can realize single-mode output. A tapered mode-locked semiconductor laser usually consists of two parts: a ridge-shaped waveguide region and a tapered gain region. The ridge-shaped waveguide area is used for mode filtering to achie...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01S5/024H01S5/042
Inventor 李刚张松崔碧峰徐旭红赵瑞计伟
Owner BEIJING PEONY ELECTRONICS GROUP CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products