Ultra-high-definition CMOS image sensor pixel circuit of three-dimensional structure and method for controlling ultra-high-definition CMOS image sensor pixel circuit of three-dimensional structure

Abstract

The invention discloses an ultra-high-definition CMOS image sensor pixel circuit of a three-dimensional structure and a method for controlling the ultra-high-definition CMOS image sensor pixel circuit of the three-dimensional structure. The pixel circuit comprises a photosensitive element, a sensing node, a transmission transistor, a reset transistor, a selection transistor, a first floating diffusion amplifier, a second floating diffusion amplifier, a first sampling capacitor, a second sampling capacitor, a first switch transistor and a second switch transistor, wherein the second floating diffusion amplifier conducts sampling on the voltage in a second sampling capacitor, so that a first sampling signal and a second sampling signal are obtained, and correlated double sampling is conducted on the first sampling signal and the second sampling signal through an analog-digital conversion circuit, so that an image signal is obtained. According to the ultra-high-definition CMOS image sensor pixel circuit of the three-dimensional structure and the method for controlling the ultra-high-definition CMOS image sensor pixel circuit of the three-dimensional structure, an overall shutter is obtained with low noise in an ultra-high-definition CMOS image sensor, and high-speed conversion and transmission of the image signal are achieved.

Description

technical field [0001] The invention relates to the field of image sensing, in particular to the layout improvement of a pixel circuit of a CMOS image sensor and a high-speed readout method of a pixel array signal for ultra-high-definition requirements. Background technique [0002] Image sensors are usually implemented by charge-coupled technology (CCD) and complementary metal-oxide-semiconductor technology (CMOS). CMOS image sensor chip technology uses the photoelectric effect of complementary metal oxide semiconductors to realize the electrical signal conversion of optical signals through photosensitive diode arrays, thus endowing the general integrated circuit chip with the ability to perceive external images. CMOS image sensors are compatible with modern semiconductor industry production processes. The vast majority of integrated circuit chips are manufactured using low-resistivity semiconductor materials and processes, while traditional CCDs use high-resistivity wafer...

AI Technical Summary

Problems solved by technology

However, one of the aspects that currently restricts the development of image sensor chip performance is that the transmission speed and analog-to-digital conversion speed of the image signal cannot keep up with the reading speed of the image signal, and at the same time, the signal noise of the readout is relatively high.

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