High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology

A laser diode and integrated circuit technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of increasing the design difficulty of the nth stage and its subsequent stage amplifier circuit, increasing the power consumption of the amplifier, and improving the characteristics of the eye diagram. , the effect of enhancing the output capability and reducing the system bit error rate

Active Publication Date: 2014-07-16
QIANDU TONGCHIP XIAMEN MICROELECTRONICS TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At the same time, the nth stage and its subsequent stage amplifiers usually need to increase the voltage gain by increasing the bias current in order to meet the requirements of a certain output modulation current, which not only increases the power consumption of the entire amplifier, but also increases the power consumption of the nth stage and its subsequent stages. Difficulty in Designing Stage Amplifier Circuits

Method used

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  • High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology
  • High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology
  • High-speed laser diode driver integrated circuit adopting negative capacitance neutralizing technology

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specific Embodiment approach 1

[0038] Specific implementation mode one: the following combination figure 1 , image 3 with Figure 4 Describe this embodiment, the high-speed laser diode driver integrated circuit using negative capacitance neutralization technology described in this embodiment, it is composed of m-level amplifier cascaded, m is a natural number greater than or equal to 1;

[0039] It is characterized in that the nth stage amplifier in the m stage amplifier is a controllable gain amplifier using negative capacitance neutralization technology, n≤m, and the nth stage amplifier includes a differential amplifier and a source follower;

[0040] The differential amplifier includes a controllable current source I n1 , NMOS transistor N n1 , NMOS transistor N n2 , load resistance R n1 , load resistance R n2 , capacitance C n1 and capacitance C n2 ;

[0041] The source follower includes a controllable current source I n2 , Controllable current source I n3 , NMOS transistor N n3 and NMOS tr...

specific Embodiment approach 2

[0053] Specific implementation mode two: the following combination figure 1 , image 3 with Figure 4 Describe this embodiment, the high-speed laser diode driver integrated circuit using negative capacitance neutralization technology described in this embodiment, it is composed of m-level amplifier cascaded, m is a natural number greater than or equal to 1;

[0054] The nth-stage amplifier in the m-stage amplifier is a controllable gain amplifier using negative capacitance neutralization technology, n≤m, and the nth-stage amplifier includes a differential amplifier and an emitter follower;

[0055] The differential amplifier includes a controllable current source I n1 , NPN bipolar transistor N n1 , NPN bipolar transistor N n2 , load resistance R n1 , load resistance R n2 , capacitance C n1and capacitance C n2 ;

[0056] The emitter follower includes a controllable current source I n2 , Controllable current source I n3 , NPN bipolar transistor N n3 and NPN bipolar ...

specific Embodiment approach 3

[0067] Specific implementation mode three: the following combination Figure 5 to Figure 9 Describe this embodiment mode, this embodiment mode provides a specific embodiment, take m=4, n=2, the described high-speed laser diode driver integrated circuit that adopts negative capacitance neutralization technology is formed by cascade connection of 4 stages of amplifiers, the first The stage amplifier is a differential amplifier with input 50Ω impedance matching function, such as Image 6 Shown; the second stage amplifier is a variable gain differential amplifier with negative capacitance neutralization technology, such as Figure 7 Shown; the third-stage amplifier is a differential amplifier that can realize signal polarity inversion, such as Figure 8 Shown; the fourth-stage amplifier is an open collector differential amplifier with an activeback-termination feedback network, such as Figure 9 shown.

[0068] In stage 1 amplifier, the bias current source I 11 , I 12 and I ...

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Abstract

The invention relates to a high-speed laser diode driver integrated circuit adopting a negative capacitance neutralizing technology, and belongs to the field of integrated circuits. The high-speed laser diode driver integrated circuit adopting the negative capacitance neutralizing technology aims to enlarge voltage gain -3dB bandwidths of a driver, enhance high-frequency modulation current output capability and improve eye pattern characteristics of output high-frequency current signals under the premise that the power consumption of the driver is not increased. The high-speed laser diode driver integrated circuit adopting the negative capacitance neutralizing technology is formed by m levels of amplifiers in a cascading connection mode, and the m is a natural number larger than or equal to 1. The nth-level amplifier in the m levels of the amplifiers is a controllable gain amplifier adopting the negative capacitance neutralizing technology, the n is smaller than or equal to the m, and the nth-level amplifier comprises a differential amplifier and a source electrode follower. The differential amplifier comprises a controllable current source In1, an NMOS transistor Nn1, an NMOS transistor Nn2, a load resistor Rn1, a load resistor Rn2, a capacitor Cn1 and a capacitor Cn2. The source electrode follower comprises a controllable current source In2, a controllable current source In3, an NMOS transistor Nn3 and an NMOS transistor Nn4.

Description

technical field [0001] The invention relates to a high-speed laser diode driver integrated circuit with a rate of 10Gbps and above, belonging to the field of integrated circuits. Background technique [0002] The explosive demand for network access to World Wide Web (WEB)-based applications and integrated multimedia applications (such as voice / data / image) has created a strong demand for wider bandwidth networks. The rapid evolution of microelectronics and optical network technology can promote the continuous growth of bandwidth capacity, enabling people to continuously transition to faster networks, from 10Mb / s, 100Mb / s, 1Gb / s to 10Gb / s. [0003] 10G PON (passive optical network, passive optical network) technology is now mature and is moving towards the stage of large-scale application. In order to speed up its large-scale application, it is necessary to enhance the integration and performance of each module of 10G PON and reduce the Power consumption and price, especially...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/042
Inventor 黄果池李景虎张远燚
Owner QIANDU TONGCHIP XIAMEN MICROELECTRONICS TECH CO LTD
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