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A kind of flexible piezoelectric film bulk acoustic wave resonator and preparation method thereof

A thin-film bulk acoustic wave and flexible piezoelectric technology, applied in the direction of electrical components, impedance networks, etc., can solve problems such as high cost and complicated preparation process, achieve the effects of reducing complexity, simplifying the preparation process, and expanding the scope of application

Inactive Publication Date: 2017-05-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The traditional thin film bulk acoustic resonator has complex manufacturing process and high cost. How to simplify the device manufacturing process, reduce the device manufacturing cost, and expand the application range of the device has become an urgent problem to be solved in the current thin film bulk acoustic resonator technology.

Method used

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  • A kind of flexible piezoelectric film bulk acoustic wave resonator and preparation method thereof
  • A kind of flexible piezoelectric film bulk acoustic wave resonator and preparation method thereof
  • A kind of flexible piezoelectric film bulk acoustic wave resonator and preparation method thereof

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preparation example Construction

[0034] Its preparation method comprises the following steps:

[0035] a. Deposit the bottom electrode layer on the flexible substrate by sputtering and photoetch the bottom electrode pattern;

[0036] b. Growing the piezoelectric layer of the device by sputtering on the bottom electrode;

[0037] c. Growing the top electrode layer of the device by sputtering on the piezoelectric layer and photoetching the pattern of the top electrode layer;

[0038] d. Etching out the piezoelectric layer pattern and exposing part of the bottom electrode layer by wet etching.

[0039] Specifically include the following steps:

[0040] a. Sputtering is used to grow the bottom electrode layer on the surface of the flexible substrate, and the pattern of the bottom electrode layer is photoetched. The flexible substrate can be PET, PI, etc. The bottom electrode layer can be a film layer of tungsten, molybdenum, aluminum, gold, platinum, etc., and its thickness is 50-200nm.

[0041] b. Growth of...

Embodiment 1

[0046] 1. The bottom electrode layer is grown on the surface of the flexible substrate by magnetron sputtering, and the bottom electrode pattern is photoetched, such as Figure 5 shown. The flexible substrate uses PET. The bottom electrode layer is made of molybdenum, and its thickness is 50nm.

[0047] 2. Sputtering and growing a piezoelectric layer on the bottom electrode, the piezoelectric layer is a c-axis oriented AlN film layer, and the AlN piezoelectric layer has a temperature greater than 150°C and a power density greater than 8W / cm 2 , obtained by radio frequency magnetron sputtering under the condition that the ammonia gas concentration is greater than 30%, such as Image 6 shown. The thickness of the piezoelectric layer is determined according to the actual frequency of the device.

[0048] 3. The top electrode layer is grown on the piezoelectric layer by magnetron sputtering, and the top electrode pattern is photoetched, such as Figure 7 shown. The top elect...

Embodiment 2

[0051] 1. The bottom electrode layer is grown on the surface of the flexible substrate by magnetron sputtering, and the bottom electrode pattern is photoetched, such as Figure 5 shown. The flexible substrate adopts PI. The bottom electrode layer is usually made of gold with a thickness of 200nm.

[0052] 2. Sputtering and growing a piezoelectric layer on the bottom electrode, the piezoelectric layer is a c-axis oriented AlN film layer, and the AlN piezoelectric layer has a temperature greater than 150°C and a power density greater than 8W / cm 2 , obtained by radio frequency magnetron sputtering under the condition that the ammonia gas concentration is greater than 30%, such as Image 6 shown. The thickness of the piezoelectric layer is determined according to the actual frequency of the device.

[0053] 3. The top electrode layer is grown on the piezoelectric layer by magnetron sputtering, and the top electrode pattern is photoetched, such as Figure 7 shown. Gold is use...

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Abstract

The invention discloses a flexible piezoelectric thin-film bulk acoustic wave resonator, comprising a flexible substrate, a bottom electrode layer, a piezoelectric layer and a top electrode layer. The bottom electrode layer is directly arranged on the flexible substrate, and the piezoelectric layer is arranged on the bottom electrode layer. , and a top electrode layer is arranged on the piezoelectric layer. The resonator uses a flexible material as the substrate of the device. In the device structure, the performance of the resonator can be achieved without the cavity structure or the Bragg reflection layer structure required by the traditional thin-film bulk acoustic wave resonator, and the preparation process is simple and the cost is low. At the same time, the flexible piezoelectric thin-film bulk acoustic wave resonator proposed in the present invention can greatly expand the application range of the sensor formed by the bulk acoustic wave resonator, laying a foundation for the fabrication of subsequent curved surface sensors, in vivo sensors and other biochemical sensors.

Description

technical field [0001] The invention belongs to the technical field of radio frequency micro-electromechanical systems, and in particular relates to a flexible piezoelectric film bulk acoustic wave resonator and a preparation method thereof. Background technique [0002] With the continuous development of Micro-Electro-Mechanical Systems (MEMS) technology, thin-film bulk acoustic resonators based on piezoelectric effects have gradually become the solution for wireless communication system filter chips due to their excellent performance. Compared with traditional dielectric filters, thin-film bulk acoustic wave filters are smaller in size. Compared with the surface acoustic wave filter (SAW), the film bulk acoustic wave filter has the advantages of lower insertion loss, larger power capacity, higher Q value and integration. Thin-film bulk acoustic wave filters meet the requirements of today's wireless communication systems for the miniaturization, integration, and high perfo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H9/64H03H3/02
Inventor 张睿钟慧焦向全杨杰石玉赵宝林何泽涛
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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