A TEM thin-film window for in-situ high-resolution observation of the electrophase transition process of phase change materials

Abstract

A transmission electron microscope film window for in-situ high-resolution observation of an electric field induced phase transition process of a phase transition material. The observation method comprises the following steps: processing electrode shapes on a metal sheet used as a mask plate by laser cutting or metal etching methods; covering a SiNx film window with the mask plate, plating metal electrodes by a film-plating machine; performing electron beam deposition at two ends of each obtained electrode by FIB to prepare Pt electrodes with small spacing; cutting and processing the SiNx film between the electrodes and the film between the Pt electrodes by focused ion beam to obtain a sample platform with a bridge structure; plating a film sample on the SiNx film window with the prepared electrodes by magnetron sputtering; connecting an electrified sample pole of a transmission electron microscope with the electrodes through a conductive adhesive, and performing in-situ electric experiments. The transmission electron microscope film window of the invention solves the problem that in-situ observation of the phase transition process of a phase transition material cannot be realized in a device, prevents sample damage caused by routine FIB preparation, and reduces the difficulty of sample preparation.

Description

technical field [0001] The invention relates to a thin-film window of a transmission electron microscope, and specifically uses a focused ion beam and a mask method to realize the preparation of a thin-film window for a transmission electron microscope that can observe the electrophase transition process of a phase-change material with high resolution in situ. It belongs to the field of in-situ testing of nanomaterial properties. Background technique [0002] The core of phase change memory (PCRAM) is a phase change material based on chalcogenides. At present, phase-change memory is considered to be the next-generation semiconductor storage technology that is most likely to replace the current mainstream product and become the mainstream product of future memory. Phase change storage is to use the huge difference in performance of phase change materials such as chalcogenides in the crystalline state and the amorphous state to realize 01 storage, such as the difference in op...

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Problems solved by technology

[0004] The purpose of the present invention is to overcome the defect that the phase change material in the vertical phase change memory used in practical applications is in the middle of the device and cannot be directly observed, and to provide a transmission electron microscope electrical measurement grid with controllable electrode spacing and sample size, which can use transmission electron microscopy Microscopy in situ and real-time recording of structural evolution and electrical property changes of phase change materials under electric field

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