Manufacturing method for low-voltage transient voltage suppression diode chip

Abstract

The invention discloses a method for manufacturing a low-voltage transient voltage suppression diode chip. The method includes the steps that a low-concentration phosphorus source is selectively diffused on a P-type monocrystalline wafer, wherein the doping concentration of the phosphorus source is in the magnitude order ranging from 1019 atm / cm3 to 1020 atm / cm3, and the diffusion temperature ranges from 1000 DEG C to 1200 DEG C; a high-concentration phosphorus source is diffused on the surfaces of the same sides of light doped N-type regions to form a heavy doped N-type region, wherein the doping concentration of the phosphorus source is 1021 atm / cm3 in magnitude order, so that the junction depths of the light doped N-type regions are larger than the junction depth of the heavy doped N-type region; chemical etching is carried out on the central areas of the light doped N-type regions to form grooves, it is guaranteed that the lateral etching widths are smaller than the widths of the light doped N-type regions, and the etching depths are larger than the diffusion junction depths of the light doped N-type regions. In the low-voltage tunneling breakdown mode, the chip obtained with the manufacturing method has the small reverse leakage current, power dissipation is accordingly reduced, local temperature rising of the chip is avoided, and the stability and the reliability of a circuit are improved.

Description

technical field [0001] The invention relates to a method for manufacturing a miniature semiconductor chip, in particular to a low-voltage transient voltage suppression diode chip. Background technique [0002] Transient voltage suppression device TVS can ensure that circuits and electronic components are protected from static electricity, surge pulse damage, or even failure. Generally, the TVS is connected in parallel at both ends of the protected circuit and is in a standby state. When both ends of the circuit are impacted by transient pulse or surge current, and the pulse amplitude exceeds the breakdown voltage of TVS, TVS can quickly change the impedance of both ends from high impedance to low impedance to achieve conduction, and absorb the transient state pulse. In this state, the voltage at both ends of it basically does not change with the current value, so that the voltage at both ends of it is clamped at a predetermined value, which is about 1.3 to 1.6 times the br...

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Problems solved by technology

Correspondingly, its power consumption will also increase by several orders of magnitude, which will increase the local temperature rise of the device, resulting in circuit instability and seriously affecting the stability and life of the device.

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