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LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

一种组合物、薄膜的技术，应用在镍化合物、化学仪器和方法、氧化物导体等方向，能够解决膜电阻率增大等问题，达到提高保存稳定性的效果

Active Publication Date: 2014-08-13
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the film thickness becomes non-uniform due to the generation of voids, there will be problems such as an increase in the resistivity of the film

Method used

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  • LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same
  • LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same
  • LaNiO3 thin film-forming composition and method of forming LaNiO3 thin film using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0045]

[0046] The composition was prepared in the same manner as in Example 1-1, and LaNiO 3 film.

Embodiment 1-7

[0048] The composition was prepared in the same manner as in Example 1-4, and LaNiO 3 film.

Embodiment 2-1～2-3

[0049]

[0050] As shown in Table 1 below, except that the ratio of each component is adjusted to change the concentration of the precursor in terms of oxides in the composition, the composition is prepared in the same way as in Examples 1-4 and LaNiO is formed. 3 film.

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Abstract

A LaNiO 3 thin film having extremely few voids is uniformly formed. Provided is a LaNiO 3 thin film-forming composition for forming a LaNiO 3 thin film. It induces: a LaNiO 3 precursor; a first organic solvent; a stabilizer; and a second organic solvent. The first organic solvent includes carboxylic acids, alcohols, esters, ketones, ethers, cycloalkanes, aromatic compounds, or tetrahydrofuran. The stabilizer includes ²-diketones, ²-ketones, ²-keto esters, oxyacids, diols, triols, carboxylic acids, alkanolamines, or polyvalent amines. The second organic solvent has a boiling point of 150°C to 300°C and a surface tension of 20 to 50 dyn / cm. The LaNiO 3 precursor content is I to 20 mass% with respect to 100 mass% of the composition. The stabilizer content is 0 to 10 mol with respect to 1 mol of a total amount of the LaNiO 3 precursors. The second organic solvent content is 5 to 20 mass% with respect to the composition.

Description

technical field [0001] The present invention relates to a method for forming film capacitors, ferroelectric random access memory (Ferroelectric Random Access Memory, FeRAM) capacitors, piezoelectric elements or pyroelectric LaNiO in electrodes such as type infrared detection elements 3 Composition of thin film, and LaNiO using the composition 3 Formation method of thin film. In more detail, it relates to a LaNiO that generates very few voids and can form a uniform film 3 Composition for forming thin film, and LaNiO using same 3 Formation method of thin film. Background technique [0002] As we all know, LaNiO 3 (LNO) is a substance having excellent electrical properties such as high conductivity and having strong self-orientation on the (100) plane. Moreover, LaNiO 3 The (LNO) thin film has a quasi-cubic perovskite structure, so it has good compatibility with the perovskite ferroelectric thin film and the mismatch of the lattice constant is small, so it is used to for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01G53/00H01B1/08
CPCH01B13/00H01B1/08C23C18/1225C23C18/1279C23C18/1216C04B35/01C04B35/624C04B35/62625C04B35/632C04B2235/3227C04B2235/3279C04B2235/441C04B2235/443C04B2235/449C04B2235/6585
Inventor 藤井顺樱井英章曽山信幸
Owner MITSUBISHI MATERIALS CORP
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