A kind of silicon-based group III-V nanotube and microtube and preparation method thereof
A III-V, microtube technology, applied in the field of nanotubes and microtube materials and their preparation, can solve the problems of high manipulation cost, tube structure defects, uncontrollable, etc., and achieves improved luminous quality and controllable number of tube wall turns. , the effect of fast pipe making
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0052] Embodiment 1: Preparation of III-V group InGaAs / GaAs microtubes on Si(100) substrate
[0053] S1: Clean the single crystal Si substrate and remove the oxide layer on the Si surface, and then epitaxially grow the abnormal buffer layer on the single crystal Si substrate;
[0054]RCA cleaning is performed on the Si sheet, and the oxide layer on the surface of the Si (100) substrate is removed by hydrofluoric acid (HF). Finally, the Si substrate is placed in the MOCVD reaction chamber after cleaning and drying with deionized water.
[0055] heated up to 750°C in H 2 Bake the Si sheet under the atmosphere for 30 minutes, and then pass the AsH at the same temperature 3 Passivate for 30 minutes.
[0056] Cool down to 420°C, use trimethyl (TMGa), arsine (AsH 3 ) grow a low temperature GaAs nucleation layer (LowtemperatureGaAsnucleationlayer), the thickness is 70nm, and the V / III ratio is controlled at 250.
[0057] Heating up to 630°C, using TMGa, AsH 3 Growth intermediate...
PUM
| Property | Measurement | Unit |
|---|---|---|
| diameter | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More 