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Coating for forming ITO conductive film and method for forming ITO conductive film

A technology for conductive films and coatings, which can be used in conductive coatings, conductive materials dispersed in non-conductive inorganic materials, and devices that coat surfaces with liquids, and can solve problems such as increased resistance and decreased reliability.

Active Publication Date: 2014-09-03
MITSUBISHI MATERIALS CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, if the transparent electrode obtained by the coating method is placed under high temperature and high humidity, the resistance value tends to increase due to oxygen and moisture in the environment, which has become a cause of reduced reliability.

Method used

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  • Coating for forming ITO conductive film and method for forming ITO conductive film
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  • Coating for forming ITO conductive film and method for forming ITO conductive film

Examples

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Embodiment

[0046] Next, examples of the present invention will be described in detail together with comparative examples.

[0047]

[0048] To 39.9 g of ethanol as a dispersion medium, 0.1 g of tetramethoxysilane (manufactured by Tama Chemicals Co., Ltd., trade name: methyl orthosilicate) as a surface treatment agent was slowly dropped to prepare a solution. The solution was stirred for 30 minutes. 10 g of the ITO powder obtained by the above method was added to the solution, and dispersed for 30 minutes with an ultrasonic homogenizer to prepare a coating material for forming an ITO conductive film. The concentration of the surface treatment agent was 1% by mass relative to 100% by mass of the ITO powder. According to the manufacturing method of the above-mentioned transparent conductive film, the coating material for forming the ITO conductive film was formed on the PET film by bar coating method, and the pressure was applied to the film with a roll pressure of 700 kg / cm and a delive...

Embodiment 2

[0050] 1 g of the same surface treatment agent as in Example 1 was slowly added dropwise to 39 g of methanol as a dispersion medium to prepare a solution. Except for this, an ITO conductive film was obtained in the same manner as in Example 1. The concentration of the surface treatment agent was 10% by mass relative to 100% by mass of the ITO powder.

Embodiment 3

[0052] 3 g of the same surface treatment agent as in Example 1 was slowly dropped into 37 g of 2-propanol as a dispersion medium to prepare a solution. Except for this, an ITO conductive film was obtained in the same manner as in Example 1. The concentration of the surface treatment agent was 30% by mass relative to 100% by mass of the ITO powder.

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Abstract

The invention provides a coating for forming an ITO conductive film and a method for forming the ITO conductive film, and rising of a resistance value of a transparent electrode including the ITO conductive film in high temperature and humidity can be suppressed. The coating for forming the ITO conductive film comprises ITO powders, a dispersion medium and a surface treating agent, the dispersion medium is an alcoholic solution, the surface treating agent is silicate ester with the carbon number of an alkyl group less than 2, or, the surface treating agent is a silane coupling agent having amino or sulfydryl as a terminal group. The silicate ester has 1-30 mass% relative to 100 mass% of the ITO powders, and the silane coupling agent has 0.1-30 mass% relative to 100 mass% of the ITO powders.

Description

technical field [0001] The present invention relates to a paint for forming an ITO conductive film capable of suppressing an increase in the resistance value of the ITO conductive film under high temperature and high humidity. In this specification, ITO means indium tin oxide (Indium Tin Oxide). Background technique [0002] Transparent electrodes are used in display devices such as LCD (Liquid Crystal Display), PDP (Plasma Display Panel), and organic EL (Electro Luminescence) touch panels. The transparent electrode is usually made of a transparent conductive material including ITO or the like. Such a transparent electrode is usually formed into a film by sputtering or the like (for example, refer to Patent Document 1). However, the sputtering device is expensive, and there are problems such as poor film formation efficiency and easy occurrence of cracks in the film. As a method of forming an ITO conductive film having excellent flexibility in which cracks are less likely...

Claims

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Application Information

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IPC IPC(8): C09D1/00C09D7/12C09D5/24B05D7/24H01B1/20
Inventor 米泽岳洋山崎和彦竹之下爱
Owner MITSUBISHI MATERIALS CORP