Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film

A metal thin film and sputtering target technology, which is applied in the field of sputtering targets, can solve problems such as low adhesion, achieve improved reliability, excellent oxidation resistance, and contribute to the effect of stable manufacturing

Active Publication Date: 2014-09-17
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Cu can achieve contact with ITO, it has low adhesion to the substrate. Therefore, in order to ensure th

Method used

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  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film
  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film
  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0052] [Example 1]

[0053] First, each sputtering target for forming a metal thin film for electronic parts is produced. Mo powder with an average particle diameter of 6 μm, Ni powder with an average particle diameter of 100 μm, and W powder with an average particle diameter of 8 μm were prepared. Next, the above powders are mixed and filled into a tank made of mild steel to form a Mo-30 atomic% Ni alloy and a Mo-35 atomic% W alloy, respectively, and then evacuated while heating to remove the gas in the tank Seal after ingredients. Next, the sealed can was placed in a hot isostatic pressing device, sintered at 1000° C., 120 MPa, and 5 hours, and then machined to produce sputtering targets with a diameter of 100 mm and a thickness of 5 mm.

[0054] In addition, a sputtering target composed of Mo-10 atomic% Nb alloy, Mo-15 atomic% Ni alloy, and Mo-15 atomic% W was similarly produced.

[0055] In addition, a sputtering target of Ni-20 at% W alloy was produced as follows: a predeterm...

Example Embodiment

[0068] [Example 2]

[0069] Imagined as figure 1 The structure of the laminated wiring film shown is that a base film of the composition shown in Table 2 is formed on a 25mm×50mm glass substrate, and the same sputtering device as in Example 1 is used to form the base film with the film thickness shown in Table 2. A Cu film as the main conductive film was formed on the upper surface of the Cu film, and a cover film of the composition shown in Table 2 was further formed on the upper surface of the Cu film to obtain a sample of the laminated wiring film. Among them, the Cu sputtering target is produced by mechanically processing a sheet of oxygen-free copper from Hitachi Electric Wire Co., Ltd.

[0070] The evaluation of oxidation resistance was performed under the same conditions as in Example 1. In addition, for the evaluation of humidity resistance, the change in resistance value after each sample obtained above was left in a high temperature and high humidity environment of 85° ...

Example Embodiment

[0078] [Example 3]

[0079] In the same manner as in Example 2, a base film with the composition shown in Table 3 was formed on a 25mm×50mm glass substrate, and the same sputtering device as in Example 1 was formed on the base film with the film thickness shown in Table 3 respectively. The Al film of the main conductive film and the cover film were further formed on the Al film to obtain a sample of the laminated wiring film. Among them, the Al sputtering target is produced by mechanically processing a sheet material purchased from Sumitomo Chemical Co., Ltd.

[0080] The evaluation of oxidation resistance was performed under the same conditions as in Example 1. In addition, for the evaluation of humidity resistance, the resistance value changes after each sample obtained above was left in a high temperature and high humidity environment of 85° C.×85% for 100 hours, 200 hours, and 300 hours were measured. The resistance value was measured using a 4-terminal sheet resistivity mete...

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Abstract

The invention provides a metal thin film for an electronic component and a mo alloy sputtering target material for forming a metal thin film which have improved wet resistance and oxidative resistance and are capable of maintaining low resistance value even in a heating procedure when being overlapped with a main conducting film A1 or Cu of low resistance. The metal thin film for the electronic component is characterized in that composition formula of the atomic ratio is manifested as follows: Mo100-x-y-Nix-Wy, 10=<X=<50, 10=<y=<40,x+y=<65 and the remaining amount composed of inevitable impurifies. The mo alloy sputtering target material for forming the metal thin film is characterized in that the atomic ratio is manifested as follows: Mo100-x-y-Nix-Wy, 10=<X=<50, 10=<y=<40,x+y=<65 and the remaining amount composed of inevitable impurifies.

Description

technical field [0001] The present invention relates to a metal thin film for electronic components requiring moisture resistance and oxidation resistance, and a sputtering target for forming the metal thin film. Background technique [0002] Flat panel display (Flat Panel Display, hereinafter referred to as FPD) such as electrophoretic displays used in liquid crystal displays (hereinafter referred to as LCD), plasma display panels (hereinafter referred to as PDP), electronic paper, etc., and various semiconductor devices For thin-film electronic components such as thin-film sensors and magnetic heads, low-resistance wiring films are required. For example, FPDs such as LCDs, PDPs, and organic EL displays on which thin-film devices are formed on glass substrates require lower resistance of the wiring film due to larger screens, higher definition, and faster response. In addition, in recent years, new products such as flexible FPDs that incorporate operable touch panels and r...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14C22C27/04C22C30/00
CPCC22C27/04C23C14/14C23C14/34
Inventor 村田英夫
Owner HITACHI METALS LTD
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