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Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film

A metal thin film and sputtering target technology, which is applied in the field of sputtering targets, can solve problems such as low adhesion, achieve improved reliability, excellent oxidation resistance, and contribute to the effect of stable manufacturing

Active Publication Date: 2014-09-17
HITACHI METALS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although Cu can achieve contact with ITO, it has low adhesion to the substrate. Therefore, in order to ensure the adhesion to the substrate, it is necessary to make a laminated wiring film that covers Cu with Mo or Mo alloy.

Method used

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  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film
  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film
  • Metal thin film for electronic component and mo alloy sputtering target material for forming metal thin film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0053] First, each sputtering target for forming the metal thin film for electronic components was produced. Mo powder with an average particle diameter of 6 μm, Ni powder with an average particle diameter of 100 μm, and W powder with an average particle diameter of 8 μm were prepared. Next, the above-mentioned powders were mixed and filled into mild steel tanks so as to form Mo-30 atomic % Ni alloy and Mo-35 atomic % W alloy, and then vacuum exhausted while heating to remove the gas in the tank. Seal after ingredients. Next, the sealed can was placed in a hot isostatic press, and after sintering at 1000° C., 120 MPa, for 5 hours, each sputtering target with a diameter of 100 mm and a thickness of 5 mm was produced by machining.

[0054] In addition, sputtering targets composed of Mo-10 atomic % Nb alloy, Mo-15 atomic % Ni alloy, and Mo-15 atomic % W were produced in the same manner.

[0055] In addition, the sputtering target of the Ni-20 atomic % W alloy was produced by we...

Embodiment 2

[0069] conceived as figure 1 For the configuration of the laminated wiring film shown, the base film with the composition shown in Table 2 was formed on a glass substrate of 25 mm x 50 mm, and the base film was formed with the film thickness shown in Table 2 using the same sputtering device as in Example 1. A Cu film as a main conductive film was formed on the upper surface of the Cu film, and a cover film having the composition shown in Table 2 was formed on the Cu film to obtain a sample of a laminated wiring film. Among them, the Cu sputtering target was manufactured by machining an oxygen-free copper plate of Hitachi Electric Wire Co., Ltd.

[0070] Evaluation of oxidation resistance was measured under the same conditions as in Example 1. In addition, regarding the evaluation of the moisture resistance, changes in the resistance value after leaving each sample obtained above in a high-temperature, high-humidity environment of 85° C.×85% for 100 hours and 200 hours were m...

Embodiment 3

[0079] In the same manner as in Example 2, an undercoat film having the composition shown in Table 3 was formed on a glass substrate of 25 mm×50 mm, and formed on the undercoat film with the film thickness shown in Table 3 using the same sputtering device as in Example 1. An Al film of the main conductive film, and further a cover film was formed on the Al film to obtain a sample of a laminated wiring film. Among them, the sputtering target of Al was manufactured by machining a plate purchased from Sumitomo Chemical Co., Ltd.

[0080] Evaluation of oxidation resistance was measured under the same conditions as in Example 1. In addition, regarding the evaluation of moisture resistance, changes in resistance value were measured after leaving each sample obtained above in a high-temperature and high-humidity environment of 85° C.×85% for 100 hours, 200 hours, and 300 hours. The resistance value was measured using a 4-terminal thin film resistivity meter MCP-T400 manufactured by ...

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Abstract

The invention provides a metal thin film for an electronic component and a mo alloy sputtering target material for forming a metal thin film which have improved wet resistance and oxidative resistance and are capable of maintaining low resistance value even in a heating procedure when being overlapped with a main conducting film A1 or Cu of low resistance. The metal thin film for the electronic component is characterized in that composition formula of the atomic ratio is manifested as follows: Mo100-x-y-Nix-Wy, 10=<X=<50, 10=<y=<40,x+y=<65 and the remaining amount composed of inevitable impurifies. The mo alloy sputtering target material for forming the metal thin film is characterized in that the atomic ratio is manifested as follows: Mo100-x-y-Nix-Wy, 10=<X=<50, 10=<y=<40,x+y=<65 and the remaining amount composed of inevitable impurifies.

Description

technical field [0001] The present invention relates to a metal thin film for electronic components requiring moisture resistance and oxidation resistance, and a sputtering target for forming the metal thin film. Background technique [0002] Flat panel display (Flat Panel Display, hereinafter referred to as FPD) such as electrophoretic displays used in liquid crystal displays (hereinafter referred to as LCD), plasma display panels (hereinafter referred to as PDP), electronic paper, etc., and various semiconductor devices For thin-film electronic components such as thin-film sensors and magnetic heads, low-resistance wiring films are required. For example, FPDs such as LCDs, PDPs, and organic EL displays on which thin-film devices are formed on glass substrates require lower resistance of the wiring film due to larger screens, higher definition, and faster response. In addition, in recent years, new products such as flexible FPDs that incorporate operable touch panels and r...

Claims

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Application Information

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IPC IPC(8): C23C14/34C23C14/14C22C27/04C22C30/00
CPCC22C27/04C23C14/14C23C14/34
Inventor 村田英夫
Owner HITACHI METALS LTD
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