Film forming method

Inactive Publication Date: 2014-10-01
DAINIPPON SCREEN MTG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the film formation rate of the ALD method is extremely slow, so the method of forming an aluminum oxide film by the ALD method is not suitable for mass production

Method used

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Embodiment Construction

[0054] Embodiments will be described below with reference to the drawings. In addition, the following embodiment is an example which actualized this invention, and is not an example for limiting the technical scope of this invention. In addition, for easy understanding, in the drawings, the size and number of each part may be exaggerated or simplified. In addition, in some of the drawings, XYZ orthogonal coordinate axes are indicated for explaining directions. The Z-axis direction among these coordinate axes indicates the direction of the vertical line, and the XY plane is a horizontal plane.

[0055]

[0056] while referring to figure 1 , the overall structure of the film forming apparatus 100 will be described. figure 1 is a diagram schematically showing a schematic configuration of the film forming apparatus 100 . In addition, in figure 1 and later referenced figure 2 , Figure 7 In , the interior of the chamber is seen through the side walls of the chamber.

[0...

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PUM

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Abstract

The invention provides a film forming method in which technology for forming a film with excellent characteristic in a quick enough speed. First plasma is generated in a processing space through applying a sputtering voltage on an aluminum target, and furthermore inductance coupling type second plasma is generated in the processing space through making high-frequency current flow to an inductance coupling antenna with less than one circles; and simultaneously, sputtering gas and oxygen are supplied into the processing space for performing sputtering on the aluminum target, thereby forming an aluminum oxide film on an object (9) through reactive sputtering. At least first plasma is generated in the processing space, and simultaneously sputtering gas is supplied to the processing space for performing sputtering on the aluminum target, thereby forming the aluminum film on the object (9). The object (9) on which one film selected from the aluminum oxide film and the aluminum film is formed is not exposed in atmosphere, and furthermore the other film is formed through laminating on one film formed on the object (9).

Description

technical field [0001] The present invention relates to a technique for forming a film on an object. Background technique [0002] Currently, there are various techniques for forming a film on an object to be coated. For example, Patent Document 1 describes the formation of aluminum oxide (Al 2 o 3 ) thin film (passivation film) technology. [0003] Patent Document 1: Japanese Unexamined Patent Publication No. 2012-39088 [0004] Patent Document 2: Japanese Unexamined Patent Publication No. 2011-176283 [0005] Patent Document 3: Japanese Patent No. 4005912 [0006] Since the aluminum oxide film has excellent electrical properties and sealing properties, it is expected to be used, for example, as a rear passivation film of a p-type silicon substrate of a solar cell. However, the film formation rate of the ALD method is extremely slow, and therefore, the method of forming an aluminum oxide film by the ALD method is not suitable for mass production. Contents of the inv...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/34C23C14/56
CPCY02E10/50
Inventor 山本悟史
Owner DAINIPPON SCREEN MTG CO LTD
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