Preparation method of large-size sapphire crystal dynamic temperature field
A sapphire crystal and dynamic temperature technology, applied in crystal growth, chemical instruments and methods, single crystal growth, etc., can solve the problems of impurity generation, difficulty in adoption, and deterioration of crystal growth quality, and achieve low probability of defect generation and convenience Growth conditions, the effect of reducing temperature field disturbance
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Embodiment 1
[0027] Example 1: Preparation of Φ206mm sapphire crystal by dynamic temperature field method
[0028] The preparation of the large-size sapphire crystal of the present embodiment is as follows image 3 performed in a high temperature furnace as indicated. Al with a purity of 99.9995% 2 o 3 Put the raw materials into a tungsten crucible of φ220mm, put the crucible into the furnace, seal the furnace, feed the cooling water into the whole system, adjust the flow rate of the cooling water so that the temperature of the cooling water at the outlet is within the range of room temperature ± 2°C, and vacuumize to 6×10 -3 After Pa, start to heat the main heating element on the side wall at a speed of 4kw / h, and at the same time heat the main heating element on the bottom at a speed of 5kw / h. After reaching the target power, keep the temperature until the raw materials are completely melted, drive away the bubbles in the melt, and keep the temperature for 1 hour to stabilize the temp...
Embodiment 2
[0033] Example 2: Preparation of Φ262 sapphire crystal by dynamic temperature field method
[0031] The preparation of the large-size sapphire crystal of the present embodiment is as follows image 3 performed in a high temperature furnace as indicated. Al with a purity of 99.9995% 2 o 3 Put the raw material into a tungsten crucible of φ280mm, put the crucible into the furnace, seal the furnace, feed the cooling water into the whole system, adjust the flow rate of the cooling water so that the temperature of the cooling water at the outlet is in the range of room temperature ± 2°C, and vacuumize to 6×10 -3 After Pa, start to heat the main heating element on the side wall at a speed of 4.2kw / h, and at the same time heat the main heating element on the bottom at a speed of 5.1kw / h. After reaching the target power, keep the temperature until the raw materials are completely melted, drive away the bubbles in the melt, and keep the temperature for 1 hour to stabilize the tempera...
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