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Thz detection structure and preparation method of high tcr absorption sensitive composite thin film

A composite film and sensitive technology, applied in the field of terahertz wave detection, can solve the problems of poor adhesion and difficulty in making uniform and continuous films, and achieve the effect of simple and reasonable preparation process

Active Publication Date: 2017-06-23
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as a sensitive layer, cytochrome c encounters a very important problem that it has poor adhesion to the substrate, making it difficult to make a uniform continuous film.

Method used

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  • Thz detection structure and preparation method of high tcr absorption sensitive composite thin film

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Embodiment Construction

[0025] Below in conjunction with accompanying drawing and embodiment the present invention will be further described:

[0026] The present invention provides a THz detection structure with a high TCR absorption-sensitive composite thin film, which is characterized in that it includes a substrate 1, a readout circuit 20, a reflective layer 22, and a sacrificial layer 23, and the readout circuit is arranged on the substrate 1 , the readout circuit 20 is provided with a circuit interface 21; the sacrificial layer 23 is prepared on the reflective layer substrate, and a buffer layer 24, a supporting layer 25, and an electrode 26 are sequentially prepared on the reflective layer from bottom to top. The circuit interface is connected; an absorption-sensitive composite film is prepared on the electrode and the supporting layer.

[0027] The preparation process of the THz detection structure of the high TCR absorption-sensitive composite thin film of the present invention includes: pre...

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Abstract

The invention discloses a THz detection structure manufacturing method of an absorption sensitive composite film based on the combination of a carbon nano tube and high-TCR cytochrome C. The absorption sensitive composite film is manufactured on the top layer of a THz detection structure. The special optical property of the carbon nano tube is utilized in the composite film, and the absorption efficiency of the detection structure on THz wave band radiation can be enhanced obviously. Meanwhile, due to the fact that the cytochrome C is high in TCR, compared with amorphous silicon, vanadium oxide, metallic titanium, yttrium barium copper oxide and other commonly-used heat-sensitive materials, the cytochrome C has the higher TCR value, the TCR of the cytochrome C ranges from 20 percent / K to 38 percent / K, and the composite film has the excellent heat sensitive performance. Therefore, the composite film has the functions of an absorption layer and a sensitive layer at the same time, the sensitivity of a detector can be greatly improved, response time can be greatly accelerated, and the detection performance of the THz detector is improved.

Description

technical field [0001] The invention relates to the technical field of terahertz wave detection, and more specifically, to a THz detector based on a high TCR absorption-sensitive composite film. [0002] technical background [0003] Terahertz detector is one of the key devices in the application of terahertz imaging technology. In the development and application of terahertz detectors, the detection of terahertz signals is of great significance. Because, on the one hand, compared with shorter-wavelength optical band electromagnetic waves, the photon energy of terahertz radiation is low, and background noise usually occupies a prominent position; on the other hand, with the application of terahertz detection technology in various fields, especially in the military field In-depth development, continuous improvement of receiving sensitivity has become an inevitable requirement. Since the thermally sensitive film in the detection unit of the terahertz detector has weak absorpt...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01J5/10
Inventor 王军丁杰郭晓珮樊林苟君蒋亚东
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA