Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Lanthanum-oxide-added binary thermistor material

A thermistor and lanthanum oxide technology, applied in the direction of resistors with negative temperature coefficient, etc., can solve the problems of smaller application environment, narrower temperature measurement range, unusable, etc., and achieve high temperature measurement sensitivity and strong stability. , good linear effect

Active Publication Date: 2014-10-08
JURONG BOYUAN ELECTRONICS
View PDF3 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the prior art manganese and cobalt binary system formula, if no special additives are added, if the B value is 5500-6000K, the resistivity should be 10000-50000 (kΩ.mm). To increase the B value, The resistivity will also increase, and the product cannot be used in the normal temperature or low temperature range, which narrows the temperature measurement range, resulting in a smaller application environment, which cannot meet customer requirements

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] Embodiment 1: A binary system thermistor material added with lanthanum oxide, comprising the following components by weight percentage: Mn 2 o 3 78%, Co. 2 o 3 20.5% and lanthanum oxide 1.5%.

[0018] Its preparation method comprises the following steps:

[0019] (1) Preparation of ceramic slurry: First, mix the above-mentioned ingredients into a powder according to the weight percentage, and then add ethanol, binder, and dispersant to make a slurry, wherein the powder: ethanol: binder (CK24): dispersion Agent (BYK110) weight ratio = 1:0.3:0.5:0.08; Among them, the adhesive is CK24, which is a vinyl modified adhesive for electronic ceramics. The dispersant adopts the dispersant of model BYK110.

[0020] (2) Tape casting, put the prepared slurry in a vacuum box, use a catheter to absorb the slurry on the carrier film to obtain a film with a thickness of 20-70 μm, and then transfer it circularly and bake it in an oven at 30-60°C Dry each layer, cycle production to t...

Embodiment 2

[0033] Embodiment 2: basically identical with embodiment 1, difference is the composition of thermistor material and the proportioning of powder and ethanol, binding agent, dispersant, specifically as follows:

[0034] The weight percent of each composition is as follows: Mn 2 o 3 72%, Co. 2 o 3 26% and lanthanum oxide 2.0%.

[0035] The weight ratio of powder: ethanol: binder: dispersant = 1:0.4:0.66:0.6.

[0036] After testing, the B value of the thermistor material is 5500-6000K, and the resistivity is 150-300 (kΩ.mm).

Embodiment 3

[0037] Embodiment 3: basically identical with embodiment 1, difference is the composition of thermistor material and the proportioning of powder and ethanol, binding agent, dispersant, specifically as follows:

[0038] The weight percent of each composition is as follows Mn 2 o 3 75%, Co. 2 o 3 23.5% and lanthanum oxide 1.5%.

[0039] The weight ratio of powder: ethanol: binder: dispersant = 1:0.4:0.7:0.1.

[0040] After testing, the B value of the thermistor material is 5500-6000K, and the resistivity is 150-300 (kΩ.mm).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
electrical resistivityaaaaaaaaaa
electrical resistivityaaaaaaaaaa
Login to View More

Abstract

The invention discloses a lanthanum-oxide-added binary thermistor material. The thermistor material comprises the following components in percentages by weight: 70%-80% of Mn2O3, 10%-28% of Co2O3 and 0.5%-2.0% of lanthanum oxide. According to the manganese-cobalt binary formula disclosed by the prior art, if the B value is required to obtain 5,500-6,000K under the condition of not adding special additives, the resistivity can only be 10,000-50,000 (kOmega.mm), and the B value of the lanthanum-oxide-added binary thermistor material is 5,500-6,000K and the resistivity is 150-300 (kOmega.mm). The lanthanum-oxide-added binary thermistor material has relatively large B value, the resistivity can be more moderate and applied in a wide range, the temperature sensitivity is relatively high and the lanthanum-oxide-added binary thermistor material has relatively strong stability.

Description

technical field [0001] The invention relates to a thermistor material, in particular to a binary system thermistor material added with lanthanum oxide. Background technique [0002] NTC (Negative Temperature Coefficient, negative temperature coefficient) thermistor materials are generally sintered from transition metal oxide powders, and the existing transition metal oxide powders have many systems and formulas for their components and contents. The material characteristic constant B value of the thermistor material is not only affected by the formula of the metal oxide powder, but also related to the resistivity of the thermistor material. In the prior art manganese and cobalt binary system formula, if no special additives are added, if the B value is 5500-6000K, the resistivity should be 10000-50000 (kΩ.mm). To increase the B value, The resistivity will also increase, and the product cannot be used in the normal temperature or low temperature range, which narrows the temp...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C04B35/01C04B35/622H01C7/04
Inventor 王梅凤
Owner JURONG BOYUAN ELECTRONICS
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products