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A technology of panel processing and processing method, applied in the field of sapphire material mobile phone panel processing, can solve the problems of high cost and low processing efficiency of sapphire mobile phone panels, and achieve the effects of long service life, screen scratch protection and high hardness
Inactive Publication Date: 2014-10-08
CHANGZHOU C PE PHOTO ELECTRICITY SCI & TECHN
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Research shows that sapphire mobile phone panels can be processed efficiently and cost-effectively
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[0020] The whole preparation and processing method needs to carry out the following steps: material - cutting - chamfering - rough grinding - annealing - DMP - CMP - cleaning - coating - silk screen - finished product inspection, of which 1. Cutting is to cut the crystal block into pieces to facilitate subsequent processing; 2. Chamfering is to trim the edge of the wafer into an arc shape to improve the mechanical strength of the edge of the slice and avoid defects caused by stress concentration; 3. Rough grinding is to remove slices 4. Annealing is to improve the stress concentration BOW caused by mechanical processing; 5. DMP is to improve the damage layer caused by rough grinding and reduce the surface roughness of the wafer; 6. CMP is to improve the roughness of the wafer so that the surface can reach nanometer precision; 7. Coating is to perform anti-fingerprint coating on the wafer; 8. Silkscreen is to perform silkscreen treatment on one side of the wafer to enhance light...
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Abstract
The invention discloses a sapphire mobile phone panel processing method. The process consists of material preparation, cutting, chamfering, rough grinding, annealing, DMP, CMP (chemical mechanical polishing), cleaning, coating, screen printing and finished product inspection, wherein in the step 1 of cutting, a crystal block is sliced to facilitate follow-up processing; in the step 2 of chamfering, the wafer edge is trimmed into an arc shape to improve the mechanical strength of the sheet edge and avoid stress concentration and consequent defect; in the step 3 of rough grinding, a wafer cutting damage layer caused by slicing is removed, and the flatness of the wafer is improved; in the step 4 of annealing, the stress concentration and large BOW caused by mechanical processing are improved; in the step 5 of DMP, the damage layer caused by rough grinding is improved, and the surface roughness of the wafer is reduced; in the step 6 of CMP, the wafer roughness is improved so that the surface reaches the nanoscale precision; in the step 7 of coating, the wafer is subjected to anti-fingerprint coating treatment; and in the step 8 of screen printing, the single side of the wafer is subjected to screen printing treatment to enhance light absorption. By adopting the method, a sapphire mobile phone panel without damage layer on surface and with nanoscale roughness can be obtained; moreover, the preparation period is greatly shortened, the production cost is saved, and the labor productivity is improved.
Description
technical field [0001] The invention relates to a method for processing a mobile phone panel made of sapphire material, which belongs to the technical field of mobile phone materials. Background technique [0002] Sapphire, also known as white gemstone, is a man-made single crystal material with a molecular formula of Al2O3 and a hexagonal crystal structure. High-quality optical functional material with extremely high hardness (Modi hardness: 9.2~9.4), high temperature resistance, wear resistance, corrosion resistance and wide light transmission band (spectral range: 0.3~6μm). It has a unique combination of excellent optical properties, physical properties and chemical properties. As the hardest (single crystal purity ≥ 99.99%, hardness 9mohs) oxide crystal, sapphire is used in various demanding fields due to its optical and physical properties. Sapphire can maintain its high strength, excellent thermal properties and transmittance at high temperatures. It has very good t...
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Application Information
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Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/00C30B29/20H04M1/02
Inventor 潘相成
Owner CHANGZHOU C PE PHOTO ELECTRICITY SCI & TECHN