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Superconductive nanowire single photon detector based on dielectric film reflector

A single-photon detector and superconducting nanowire technology, applied in the field of light detection, can solve the problems of low tolerance of nanowire size, influence of absorption efficiency, low absorption efficiency, etc., achieve large tolerance, avoid influence, and high absorption efficiency Effect

Inactive Publication Date: 2014-10-08
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0009] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a superconducting nanowire single photon detector based on a dielectric film mirror, which is used to solve the problem of the absorption efficiency of the superconducting nanowire single photon detector in the prior art. Low and high absorption efficiency areas have low tolerance to nanowire size, and the influence of substrate Fabry-Perot cavity on absorption efficiency, etc.

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  • Superconductive nanowire single photon detector based on dielectric film reflector
  • Superconductive nanowire single photon detector based on dielectric film reflector
  • Superconductive nanowire single photon detector based on dielectric film reflector

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Embodiment 1

[0038] Such as image 3 As shown, this embodiment provides a superconducting nanowire single photon detector based on a dielectric film mirror, including:

[0039] Substrate 10;

[0040] An all-dielectric multilayer film reflector 20, bonded to the surface of the substrate 10;

[0041] The superconducting nanowires 30 are combined on the surface of the all-dielectric multilayer film mirror 20 .

[0042] As an example, the superconducting nanowire single-photon detector based on a dielectric film mirror in this embodiment is a superconducting nanowire 30 single-photon detector with a front-incidence structure.

[0043] As an example, the substrate 10 includes a silicon substrate, an MgO substrate or a sapphire substrate, and the thickness of the substrate 10 is 300-500 microns. In this embodiment, the substrate 10 is a silicon substrate 10 with a thickness of 400 microns. Of course, other types of substrates 10 or thicknesses may also be applicable to the present invention,...

Embodiment 2

[0048] Such as Figure 4 As shown, this embodiment provides a superconducting nanowire single photon detector based on a dielectric thin film mirror. 2 Layer 201 with TiO 2 layer 203, and the uppermost layer (that is, the layer in contact with the superconducting nanowire 30) is SiO 2 Layer 201. The all-dielectric multilayer film used in this embodiment benefits from mature optical film technology, is very easy to implement, and has low process cost. Using all-dielectric materials as reflectors avoids the absorption loss of light by metal materials, especially avoids the The loss of light in the infrared band, and the use of a mirror structure with the surface of the substrate 10 can avoid the influence of the Fabry-Perot cavity of the substrate 10 on the absorption efficiency.

[0049] Such as Figure 7 In the present example, the reflectivity of the dielectric film mirror and the absorption efficiency (absorptance) of the superconducting nanowire single photon detection ...

Embodiment 3

[0051] Such as Figure 5 As shown, this embodiment provides a superconducting nanowire single photon detector based on a dielectric thin film mirror. 2 Layer 201 with Ta 2 o 5 layer 204, and the uppermost layer (that is, the layer in contact with the superconducting nanowire 30) is SiO 2 Layer 201. The all-dielectric multilayer film used in this embodiment benefits from mature optical film technology, is very easy to implement, and has low process cost. Using all-dielectric materials as reflectors avoids the absorption loss of light by metal materials, especially avoids the The loss of light in the infrared band, and the use of a mirror structure with the surface of the substrate 10 can avoid the influence of the Fabry-Perot cavity of the substrate 10 on the absorption efficiency.

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Abstract

The invention provides a superconductive nanowire single photon detector based on a dielectric film reflector. The superconductive nanowire single photon detector based on the dielectric film reflector comprises a substrate, the full dielectric multilayer film reflector combined to the surface of the substrate, and superconductive nanowires combined to the surface of the full dielectric multilayer film reflector. The substrate comprises a silicon substrate or a MgO substrate or a sapphire substrate, the full dielectric multilayer film reflector comprises SiO2 layers and SiO layers stacked alternately, or SiO2 layers and Si layers stacked alternately, or SiO2 layers and TiO2 layers stacked alternately, or SiO2 layers and Ta2O5 layers stacked alternately. The materials of the superconductive nanowires comprise NbN or Nb or TaN or NbTiN or WSi. The superconductive nanowire single photon detector based on the dielectric film reflector has high absorption efficiency, has large tolerance on sizes of the nanowires in high absorption efficiency areas, and can avoid influences of a Fabry-Perot cavity on the absorption efficiency.

Description

technical field [0001] The invention belongs to the technical field of light detection, and relates to a superconducting nanowire single-photon detector, in particular to a superconducting nanowire single-photon detector based on a dielectric film mirror. Background technique [0002] Superconducting Nanowire Single Photon Detector (SNSPD) is an important photon detector, which can realize single photon detection from visible light to infrared band. [0003] When SNSPD works, it is placed in a low temperature environment (<4K), the device is in a superconducting state, and a certain bias current I is applied. b , I b slightly less than the device critical current I c . When a single photon is incident on the nanowire in the device, it will break up the Cooper pair and form a large number of hot electrons, thus forming a localized hot spot, which is under the bias current I b Due to the diffusion of Joule heat under the action of the nanowires, the local quenching of t...

Claims

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Application Information

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IPC IPC(8): H01L39/02H01L39/10G01J1/42
Inventor 李浩尤立星王镇
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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