Gas supplying device and plasma processing device

Abstract

The present invention discloses a plasma processing device. The plasma processing device comprises a reaction cavity and a gas supplying device arranged above the reaction cavity horizontally, the gas supplying device comprises an annular main body, a gas inlet used for introducing a reaction gas, a gas channel embedded in the annular main body and communicated with the gas inlet, and a plurality of gas spraying holes used for discharging the reaction gas. The gas inlets of the gas spraying holes are connected with the gas channel, and the gas outlets are arranged on an inner side wall of the annular main body, wherein the gas outlets of the gas spraying holes are located above the gas channel, and the axial lines of the gas spraying holes and the axial line of the gas supplying device form a first included angle. The gas supplying device and the plasma processing device of the present invention enable the degree of dissociation of the reaction gas and the density of the generated plasma to be improved effectively.

Description

technical field [0001] The invention relates to semiconductor processing equipment, in particular to a gas supply device and a plasma processing device with the gas supply device. Background technique [0002] In recent years, with the development of semiconductor manufacturing processes, the requirements for the integration and performance of components are getting higher and higher. Plasma Technology (Plasma Technology) is widely used in many semiconductor processes by exciting the plasma formed by reactive gases, such as In the deposition process (such as chemical vapor deposition), etching process (such as dry etching), it is playing a pivotal role in the field of semiconductor manufacturing. Generally speaking, in a plasma processing device, the plasma is generally formed by radio frequency excitation of the reactive gas discharged from the top of the reaction chamber, and then the plasma is bombarded on the wafer on the chuck by the bias voltage of the electrostatic ch...

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Problems solved by technology

However, in the above two gas supply devices, since the reaction gas has a relatively large initial velocity when discharged and its discharge direction is horizontally toward the center of the gas supply device or vertically downward (such as figure 1 (shown in the direction of the middle arrow), and the external exhaust device 7 usually has a strong pumping capacity, under the action of the two, the reactant gas will drop rapidly after being discharged, and will pass through the electric field quickly without being fully dissociated, resulting in a reaction The plasma density formed by the gas is reduced, which is not conducive to the plasma treatment process

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