Unlock instant, AI-driven research and patent intelligence for your innovation.

High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier

A wide dynamic range, transimpedance amplifier technology, applied in the circuit field, can solve problems such as abnormal response, circuit saturation, large receiving current, etc., and achieve the effect of simple structure, reduced power consumption, and reduced chip area

Active Publication Date: 2014-10-15
XIDIAN UNIV
View PDF3 Cites 14 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

When the transmitting end is very close to the receiving end, the receiving current is large, and the circuit may be saturated and cannot respond normally

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier
  • High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier
  • High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0030] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.

[0031] Such as Figure 1a , Figure 1b Shown is the basic structure of the push-pull inverter used in the embodiment of the present invention. Figure 1a Among them, Vdd is the power supply voltage, gnd is the ground signal, and the amplifier tube M 1 and M 2 At the same time, it works in the saturation region, so that the transconductance and gain-bandwidth product of the circuit are maximized. Feedback resistor R F for M 1 and M 2 Provides bias and adjusts input matching, M 3 is the active load such that M 1 and M 2 can expand its width-to-length ratio to prevent overshoot, V out is the output voltage signal.

[0032] Figure 1b In, I in and C p are the equivalent current and parasitic capacitance of the photodiode, respectively, C gs1 and...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a high-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier, which comprises a feedforward path formed by cascaded push-pull phase inverters, a feedback resistor, an automatic gain control path, a shunt tube, and a resistance divider, wherein the input end of the feedforward path inputs small current signals, and the output end of the feedforward path outputs large voltage signals; the feedback resistor is connected between the input end and the output end of the feedforward path, and the automatic gain control path is connected between the input end and the output end of the feedforward path and is connected with the feedback resistor in parallel; the shunt tube is connected between the input end of the feedforward path and the resistance divider, and the resistance divider is connected between the shunt tube and the output end of the feedforward path and is used for controlling the breakover and turn-off of the shunt tube. According to the scheme provided by the invention, weak signals received can be amplified in high gain and at low noise, especially, the dynamic range of input current signals is effectively expanded; meanwhile, the circuit has the characteristics of simple design and monolithic integration.

Description

technical field [0001] The invention relates to the field of circuits, in particular to a CMOS transimpedance amplifier with high gain and wide dynamic range. Background technique [0002] In fiber optic communication systems, preamplifiers have a significant impact on the performance of the entire system, such as speed, sensitivity, and signal-to-noise ratio. According to the characteristics of the bias resistor, there are three optional preamplifiers: low impedance amplifier, transimpedance amplifier and high impedance amplifier. Low-impedance amplifiers have simple structure and large bandwidth, but the gain is not high enough, and the noise is large, while high-impedance amplifiers have high sensitivity and low noise, but have the disadvantages of small bandwidth and narrow dynamic range. Choosing a transimpedance amplifier can meet these performance requirements A good compromise was achieved. [0003] When the transmitting end is far away from the receiving end, the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H03F3/08
Inventor 刘帘曦邹姣朱樟明杨银堂牛越
Owner XIDIAN UNIV
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More