High-gain and wide-dynamic-range CMOS (Complementary Metal-Oxide-Semiconductor) transimpedance amplifier
A wide dynamic range, transimpedance amplifier technology, applied in the circuit field, can solve problems such as abnormal response, circuit saturation, large receiving current, etc., and achieve the effect of simple structure, reduced power consumption, and reduced chip area
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[0030] In order to make the technical problems, technical solutions and advantages to be solved by the present invention clearer, the following will describe in detail with reference to the drawings and specific embodiments.
[0031] Such as Figure 1a , Figure 1b Shown is the basic structure of the push-pull inverter used in the embodiment of the present invention. Figure 1a Among them, Vdd is the power supply voltage, gnd is the ground signal, and the amplifier tube M 1 and M 2 At the same time, it works in the saturation region, so that the transconductance and gain-bandwidth product of the circuit are maximized. Feedback resistor R F for M 1 and M 2 Provides bias and adjusts input matching, M 3 is the active load such that M 1 and M 2 can expand its width-to-length ratio to prevent overshoot, V out is the output voltage signal.
[0032] Figure 1b In, I in and C p are the equivalent current and parasitic capacitance of the photodiode, respectively, C gs1 and...
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