A kind of impurity segregation and condensation Schottky source-drain device and its preparation method
A Schottky potential and impurity technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as the complexity of GAA source and drain design, achieve thermal stability problems, good gate control capabilities, and improve drive The effect of current
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[0043] The present invention provides a MOS transistor with a novel structure, specifically a ring-gate MOS transistor (e.g., vertical channel, impurity segregation, and Schottky barrier source / drain structure). figure 1 Shown), including a vertical ring-shaped semiconductor channel 4, a ring-shaped gate electrode 6, a ring-shaped gate dielectric layer 5, a source region 2, an impurity segregation region 7, a drain region 3, an impurity Separation zone 8, a semiconductor substrate 1; wherein, the source region 2 is located at the bottom of the vertical channel 4 and is connected to the substrate 1, and the impurity separation zone 7 is between the source region 2 and the vertical channel 4; The region 3 is located on the top of the vertical channel 4, the impurity segregation region 8 is between the drain region 3 and the vertical channel 4; the gate dielectric layer 5 and the gate electrode 6 surround the vertical channel 4 in a ring shape; the source region 2 and The drain reg...
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