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Method for contacting a semiconductor substrate, more particularly for contacting solar cells, and solar cells contacted thereby

A technology for solar cells and semiconductors, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as the complexity of the electroplating cladding method, and achieve significant energy savings, low contact resistance, and low line resistance.

Inactive Publication Date: 2014-11-05
UNIV STUTTGART
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0017] Although this appears to be a feasible solution in principle for producing very thin front contacts on solar cells with good electrical conductivity, the additional galvanic cladding method is very complicated

Method used

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  • Method for contacting a semiconductor substrate, more particularly for contacting solar cells, and solar cells contacted thereby
  • Method for contacting a semiconductor substrate, more particularly for contacting solar cells, and solar cells contacted thereby

Examples

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Embodiment Construction

[0056] exist figure 1 A cross-section of a silicon solar cell is shown, indicated generally at 10 . The solar cell 10 has an emitter 12 (n-type) on its front side, followed by a base layer 14 (p-type), onto which a rear contact 16 made of aluminum is applied planarly. Optionally covered is the rear contact 16 with a passivation layer 23 of amorphous silicon.

[0057] On the front side, a passivation layer, which may consist of silicon nitride, for example, is situated on the emitter 12 . At selected locations, the passivation layer 18 is penetrated by the LIFT process (as will be explained further below) to produce a seed structure 20 which is formed as a very thin intermediate layer and directly contacts the emitter 12 . A thickening layer in the form of a thickening layer 22 of copper alloy is applied thereon. In this way, the front contact 19 is formed on the front side of the solar cell 10 by the combination of the germ structure 20 and the thickening layer 22 . An H-s...

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Abstract

A method is specified for contacting a semiconductor substrate, more particularly for contacting solar cells (10), more particularly for producing front contacts (19) on solar cells (10), in which a metal seed structure (20) is initially produced by means of a LIFT process on the surface to be contacted, and then a reinforcement layer (22) is printed onto the seed structure (20) by means of a printing method, more particularly a screen printing method or an inkjet method.

Description

technical field [0001] The invention relates to a method for contacting a semiconductor substrate, in particular for contacting a solar cell, in particular for establishing a front contact on a solar cell, wherein first the LIFT-process (Laser Induced Forward Transfer Process (Laser Induced Forward Transfer) Laser-Induced-Forward-Transfer-Prozess)) produces a metallic seed structure on the surface to be contacted. [0002] The invention also relates to a solar cell with a front contact having a seed structure of nickel or a nickel alloy and a thickened layer on the seed structure. Finally, the invention also relates to solar cells which are contacted on the rear side. Background technique [0003] Known from DE 10 2009 020 774 A1 is a method of the aforementioned type for contacting a semiconductor substrate by means of the LIFT process and a solar cell with a front contact produced in this way. [0004] The metal seed structure produced by the LIFT process should then be ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0224H01L31/18C23C14/04H01L21/285
CPCH01L31/022425Y02E10/547H01L31/1804Y02P70/50
Inventor 约尔根H·维尔纳雷内·扎普夫-哥特维克
Owner UNIV STUTTGART
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