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A mid-infrared laser crystal yb,er,eu:laysgg

An infrared laser, crystal technology, applied in the direction of crystal growth, single crystal growth, single crystal growth, etc.

Active Publication Date: 2017-07-18
FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

According to the search, there are no reports about Yb,Er,Eu:LaYSGG laser crystals at home and abroad

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  • A mid-infrared laser crystal yb,er,eu:laysgg
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  • A mid-infrared laser crystal yb,er,eu:laysgg

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Embodiment Construction

[0016] The instrument used for crystal pulling method growth is DJL-400 intermediate frequency pulling furnace, and the model of intermediate frequency power supply is KGPF25-0.3-2.5. Use Pt / Pt-Rh thermocouple and type 815EPC ohmmeter for temperature control. The crucible used is a Ф70mm×50mm iridium crucible, and the raw material used is 4N grade Y 2 o 3 、Sc 2 o 3 , La 2 o 3 , Ga 2 o 3 、Eu 2 o 3 、Er 2 o 3 and Yb 2 o 3 . Prepare raw materials according to the following chemical reaction formula:

[0017] 3xYb 2 o 3 +3yEr 2 o 3 +3zEu 2 o 3 +3wLa 2 o 3 +3(1-x-y-z-w)Y 2 o 3 +2Sc 2 o 3 +3Ga 2 o 3 =2Yb 3x Er 3y Eu 3z La3w Y 3(1-x-y-z-w) sc 2 Ga 3 o 12 Weigh the raw materials according to the stoichiometric ratio, mix them evenly, press them into flakes, put them into a platinum crucible, put them into a common sintering furnace, slowly raise the temperature to 1080°C at 150°C / h, keep it for 48h, repeat this process, and then put Sinter in a high-...

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Abstract

The invention provides an intermediate infrared laser crystal Yb, Er, Eu:LaYSGG. The molecular formula of the crystal is Yb3xEr3yEu3zLa3wY3(1-x-y-z-w)Sc2Ga3O12, wherein the substitution concentration of Yb<3+> is 1-5 percent by atom, the substitution concentration of an Er<3+> active ion is 10-50 percent by atom, the substitution concentration of Eu<3+> is 0.1-5 percent by atom, and the substitution concentration of La<3+> is 1-10 percent by atom. The Yb<3+> is doped into the crystal in order to increase the pumping light absorption efficiency of the crystal, and the Eu<3+> is doped to shorten the lower laser level lifetime of Er<3+> ion laser to a certain degree in order to restrain the self-final-state effect, so that the output efficiency of intermediate infrared laser light in the wave band of 2.7-2.8 microns is increased effectively.

Description

technical field [0001] The invention relates to the field of laser crystal materials. Background technique [0002] The 2.5-3.0μm mid-infrared band laser has very important applications in both military and civil applications, and is one of the current research hotspots in the laser field. Erbium ion 4 I 11 / 2 → 4 I 13 / 2 Transition, in different substrates, can produce 2.7-3.0μm band laser, this band overlaps with the strong absorption peak of water, so the absorption rate of water to it is particularly high, it is an ideal working band for fine surgery, this property Erbium lasers have been widely used in the fields of biology and medicine. In addition, by using a 2.7-3 μm laser to pump mid-to-far infrared nonlinear crystals to achieve optical parametric oscillation, a high-power infrared light source of 3-19 μm can be obtained, which can be used for photoelectric countermeasures (jamming), infrared lighting, laser radar, free space communication, chemical and biologic...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22H01S3/16
Inventor 王燕涂朝阳游振宇李坚富朱昭捷徐金龙
Owner FUJIAN INST OF RES ON THE STRUCTURE OF MATTER CHINESE ACAD OF SCI