Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Graphene/C60/g-C3N4 heterojunction composite film and preparation method thereof

A g-c3n4, C60 technology, applied in the field of new photocatalytic thin film materials, can solve the problems of loss of photocatalytic ability, slow migration of photogenerated electrons and holes, loss of recombination, etc.

Inactive Publication Date: 2014-12-03
TIANJIN POLYTECHNIC UNIV
View PDF3 Cites 22 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] for g-C 3 N 4 Although organic polymer semiconductors have many excellent properties as photocatalysts, they also have a common problem with organic polymer semiconductors, that is, due to the large number of defect states inside the polymer, the photogenerated electrons and holes induced by light have very high High binding energy, which will significantly slow down and shorten the migration rate and migration distance of photogenerated electrons and holes, so it is easy to recombine or decay before the redox reaction occurs and lose the photocatalytic ability
We target g-C 3 N 4 The disadvantages of slow migration of photogenerated electrons and holes, easy recombination and loss of oxidation and reduction ability are targeted at g-C 3 N 4 Introducing a charge-separation layer on the surface to form graphene / C 60 / g -C 3 N 4 The ternary heterojunction multilayer film can effectively avoid the above shortcomings, and can give full play to the heterojunction effect of the three to greatly improve the photocatalytic performance. 3 N 4 Synthesis of Ternary Heterojunction Composite Membranes and Development of New Efficient Photo-Splitting Water Materials

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment approach 1

[0012] Clean the quartz glass sheet (1cm×1cm), dry it and put it into 20mL mixed solution (98wt.% concentrated sulfuric acid and 30wt.% H 2 o 2 ; the volume ratio is 3:1), then heated up to 70°C, soaked for 30min, washed with deionized water after taking it out, and dried for later use. This process is mainly to remove glass surface impurities and surface hydrophilic treatment. Prepare 10% polyethyleneimine aqueous solution, 10% graphene aqueous solution, 10% g-C 3 N 4 Aqueous solution, 10%C 60 aqueous solution and 10% polyallylamine hydrochloride aqueous solution for later use. Immerse the clean glass piece in 10% polyethyleneimine for 15 minutes, then soak it in deionized water for 1 minute, then take it out and blow it with nitrogen for 10 minutes until it is completely dry. Then, after soaking in a 10% graphene aqueous solution for 15 minutes, water washing and nitrogen blow-drying were repeated. Then soak the glass piece in 10% polyacrylamine hydrochloride for 15 mi...

Embodiment approach 2

[0014] The main steps are the same as embodiment 1, except that the glass sheet is not soaked C 60 Aqueous solution, resulting in PEI / GO / PAH / g-C 3 N 4 multilayer film.

Embodiment approach 3

[0016] The main steps are the same as in Embodiment 1, except that the glass sheet is not soaked in the graphene aqueous solution, and what is obtained is PEI / C 60 / PAH / g-C 3 N 4 multilayer film.

[0017] Photocatalytic hydrogen production performance test:

[0018] Put 0.5g multilayer film, 80mL deionized water and 20mL methanol into the reactor, add 0.0015gH 2 PtCl 6 , after ultrasonication for 5 minutes, high-purity nitrogen gas was introduced for 30 minutes to remove the air in the reactor, and the reactor was sealed and turned on to carry out the photolysis water reaction. The gas in the 0.5mL reactor was extracted every 30min and analyzed by gas chromatography to determine the hydrogen production.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a photo-catalysis film material and a preparation method thereof, and belongs to the field of inorganic photo-catalysis materials. The photo-catalysis material comprises graphene, C60 and graphite carbon nitride. The photo-catalysis film material prepared by adopting the method has the photo-catalysis activity in a wavelength range of 400-800nm and is capable of photolyzing water under visible light or natural light radiation to produce hydrogen.

Description

technical field [0001] The invention relates to a novel photocatalytic film material. [0002] The present invention also relates to a preparation method of the photocatalytic thin film material. [0003] The present invention also relates to the use of the above-mentioned photocatalytic thin film material. Background technique [0004] for g-C 3 N 4 Although organic polymer semiconductors have many excellent properties as photocatalysts, they also have a common problem with organic polymer semiconductors, that is, due to the large number of defect states inside the polymer, the photogenerated electrons and holes induced by light have very high High binding energy, which will significantly slow down and shorten the migration rate and migration distance of photogenerated electrons and holes, so it is easy to recombine or decay before the redox reaction occurs and lose the photocatalytic ability. We target g-C 3 N 4 The disadvantages of slow migration of photogenerated e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): B01J31/06B01J35/02C01B3/04
CPCY02E60/36
Inventor 宋立民李亚淼方升叶银洲王凯秦国骁戴维斯
Owner TIANJIN POLYTECHNIC UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com