Chemically amplified i-line positive photoresist composition containing diphenol acetal polymer

A photoresist and acetal polymer technology is applied in the field of offset printing ultraviolet photosensitive computer-to-plate imaging materials and chemically amplified i-line positive photoresist compositions, and can solve the problem of low resolution, Can not meet the high resolution and high sensitivity, low sensitivity and other issues
CN104181775AInactive Publication Date: 2014-12-03HANDAN DEV ZONE LIYE CHEM
6 Cites 2 Cited by

Patent Information

Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
HANDAN DEV ZONE LIYE CHEM
Publication Date
2014-12-03
Estimated Expiration
Not applicable · inactive patent

Smart Images

  • Figure 1
    Figure 1
  • Figure 2
    Figure 2
  • Figure 3
    Figure 3
Patent Text Reader

Abstract

The invention relates to a novel chemically amplified i-line positive photoresist composition which mainly comprises (A) a diphenol divinyl ether acetal polymer obtained by reaction of a diphenol compound with various divinyl ether compounds, wherein the acetal polymer is easily subjected to acid-induced decomposition reaction; (B) a 2,1,4-diazo naphthoquinone sulfonate photosensitizer obtained by esterifying 2,1,4-diazo naphthoquinone sulfonyl chloride and a phenolic compound, wherein the photosensitizer can generate a small amount of sulfonic acid under illumination and cause acidolysis of the acetal polymer and also can serve as a photo-acid generator; and (C) a phenolic resin. The chemically amplified i-line positive light-sensitive imaging material has the advantages of high sensitivity, high resolution ratio, high transparency and the like and can be used for near ultraviolet photoresists and offset print ultraviolet light-sensitive computer-to-plate (CTP) imaging materials for semiconductor processing.
Need to check novelty before this filing date? Find Prior Art

Description

technical field

[0001] The technical field to which the invention belongs is the field of polymer photosensitive imaging materials. Specifically, the present invention relates to a novel chemically amplified i-line positive photoresist composition, and this type of novel photosensitive imaging material can be used for semiconductor processing near-ultraviolet positive photoresist (also It is called photoresist), and can also be used for offset printing of ultraviolet photosensitive computer-to-plate (CTP) imaging materials. Background technique

[0002] The diazonaphthoquinone sulfonate-novolac resin system is the mainstream photoresist for i-line (365nm) lithography technology. This is a non-chemical amplification system, which is a photodecomposition photosensitive material with novolac resin as the film-forming material and diazonaphthoquinone sulfonate product as the photosensitive component. The imaging principle is that the diazo group of diazonaphthoquinone sulfonat...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More