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A kind of preparation method of silver phosphate film

A silver phosphate film and silver phosphate technology are applied in the field of semiconductor photocatalysis and photoelectrochemical material preparation, and can solve the problems that the base photocatalyst is not easy to recover, it is not easy to realize photoelectric energy conversion, photo-splitting water for hydrogen production, etc., and achieves low cost. , easy to operate, simple effect

Inactive Publication Date: 2016-08-24
CHINA UNIV OF MINING & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The object of the present invention is to provide a kind of silver phosphate Ag 3 PO 4 Thin film preparation methods to address current silver phosphate Ag 3 PO 4 Based photocatalysts are not easy to recycle, and it is not easy to realize photoelectric energy conversion and hydrogen production by photolysis of water

Method used

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  • A kind of preparation method of silver phosphate film
  • A kind of preparation method of silver phosphate film
  • A kind of preparation method of silver phosphate film

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0020] A silver film was deposited as a seed layer by magnetron sputtering on a glass substrate, and silver nitrate AgNO with a mass percentage concentration of 0.17% was dropped on the silver film. 3 Aqueous solution, spin-coat, dry. Then drip full mass percentage concentration is 0.14% disodium hydrogen phosphate Na 2 HPO 4 aqueous solution, and then spin-coated and dried in the same manner. Repeat the above steps 5 times to obtain silver phosphate Ag 3 PO 4 Prefabricated film. Finally, it was sintered at 400°C for 1.5h to obtain silver phosphate Ag with good binding force. 3 PO 4 film.

Embodiment 2

[0022] in TiO 2 On the glass substrate, a 100nm thick silver film is formed as a seed layer by thermal evaporation, and silver nitrate AgNO with a mass percentage concentration of 0.34% is dripped on the silver film. 3 Aqueous solution, spin-coat, dry. It is 0.28% disodium hydrogen phosphate Na to drip full mass percent concentration on it again 2 HPO 4 aqueous solution, dried at 60°C for 10 minutes, and repeated the above steps 3 times to obtain silver phosphate Ag 3 PO 4 Prefabricated film. Finally, sinter at 300°C for 1 hour to obtain silver phosphate Ag with good binding force 3 PO 4 film.

Embodiment 3

[0024] On a transparent conductive glass substrate, a 50nm silver film is formed as a seed layer by electrodeposition, and the silver film is dripped with a mass percentage concentration of 0.017% silver nitrate AgNO 3 Aqueous solution, directly dried in an oven at 60°C. It is 0.014% disodium hydrogen phosphate Na on it dripping full mass percent concentration again 2 HPO 4 The aqueous solution is directly placed in an oven at 60°C to dry to obtain a silver phosphate film. Finally, sinter at 550°C for 2 hours to obtain silver phosphate Ag with good binding force. 3 PO 4 film.

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Abstract

The invention discloses a method for preparing a silver phosphate thin film, which belongs to the method for preparing semiconductor photocatalysis and photoelectrochemical materials. Steps: 1) Use alcohol and acetone reagents to ultrasonically clean the glass or silicon wafer substrate in sequence; 2) Deposit a layer of Ag film on the substrate by sputtering and thermal evaporation; 3) Drop silver nitrate AgNO on the Ag film layer. 3 , spin coating, drying; then drop disodium hydrogen phosphate Na 2 HPO 4 Aqueous solution, spin coating and drying; 4) Place it in a muffle furnace, raise the temperature to 300-550°C, heat-preserve and sinter for 0.5-3 hours to obtain silver phosphate Ag 3 PO 4 film. The silver nitrate AgNO 3 The mass percentage concentration of aqueous solution is 0.017%-0.34%; Described disodium hydrogen phosphate Na 2 HPO 4 The mass percent concentration of the aqueous solution is 0.014%-0.28%; the silver phosphate Ag 3 PO 4 The film is a structure with a thickness of 0.3-10 μm. Advantages: 1. The method of the present invention is simple, non-toxic and easy to operate. 2. The method of the present invention does not need to be protected by an inert atmosphere, has low cost, and is suitable for industrial production. 3. The adhesion of the obtained film layer is good, and the thickness of the film layer is easy to control.

Description

technical field [0001] The invention relates to a method for preparing semiconductor photocatalysis and photoelectrochemical materials, in particular to a method for preparing a silver phosphate thin film. Background technique [0002] Solar energy is a clean, abundant and inexhaustible resource with broad application prospects. One of the important uses is solar photocatalysis. It includes two types of photolysis of water and photodegradation, that is, using semiconductors to capture sunlight to decompose water or degrade pollutants. The most common photocatalyst is TiO 2 , it has the advantages of stable chemical properties, low cost, large surface area, etc., but the wide band gap makes it only able to use a very small part of ultraviolet light in sunlight. [0003] Silver phosphate Ag 3 PO 4 As a new type of visible light-responsive photocatalyst, it has excellent photocatalytic performance under the irradiation of visible light and can degrade organic pollutants. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/18
Inventor 顾修全强颖怀赵宇龙
Owner CHINA UNIV OF MINING & TECH
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