Heating chamber and plasma processing apparatus

Abstract

The invention provides a heating chamber and a plasma processing apparatus. The top of the heating chamber is provided with a heating unit for irradiating heat energy to the interior of the heating chamber in a heat radiation manner; the inner circumference wall of the heating chamber is provided with a piece-transferring opening for moving a to-be-processed workpiece in and out of the heating chamber; and the heating chamber comprises a bearing device. The bearing device comprises a lifting unit and ejection pin devices; the ejection pin devices are disposed in the heating chamber and are used for supporting the to-be-processed workpiece; the lifting unit is used for driving the ejection pin devices to rise or descend, so as to drive the to-be-processed workpiece on the ejection pin devices to rise to a preset process position above the piece-transferring opening to carry out the process or descend to a preset loading and unloading position corresponding to the piece-transferring opening to carry out loading and unloading operations. The heating chamber provided by the invention can heat the to-be-processed workpiece uniformly, and thus temperature uniformity of the to-be-processed workpiece is increased and uniformity of the process can be increased.

Description

technical field [0001] The invention relates to the technical field of microelectronic processing, in particular to a heating chamber and plasma processing equipment. Background technique [0002] Physical vapor deposition (Physical Vapor Deposition, hereinafter referred to as PVD) technology is a commonly used processing technology in the field of microelectronics, for example, it is used to process copper interconnect layers in integrated circuits. The production of copper interconnection layer mainly includes the steps of degassing, pre-cleaning, Ta(N) deposition, and Cu deposition. The degassing step is to remove water vapor and other volatile impurities on the substrate and other processed workpieces. When performing the degassing step, it is not only necessary to heat the substrate rapidly to about 350°C, but also to ensure that the substrate is heated evenly, otherwise the volatile impurities generated in some areas of the substrate will not be removed cleanly, which ...

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Problems solved by technology

[0004] The above-mentioned PVD equipment inevitably has the following problems in practical applications, that is, since the film transfer port 1a is provided on the inner peripheral wall of the degassing chamber 1, this destroys the symmetry of the circular inner peripheral wall of the degassing chamber 1, As a result, the inner peripheral wall cannot evenly reflect the heat radiated by the heating bulb 6, resulting in uneven temperature distribution in the degassing chamber 1, and because most of the heat radiated by the heating bulb 6 to the sheet transfer port 1a is difficult to reflect On the substrate 3, this will cause the difference in the heat obtained by the region of the substrate 3 corresponding to the transfer opening 1a and the region corresponding to other positions of the inner peripheral wall, thereby causing the temperature of the substrate 3 to be uneven, thereby reducing the uniformity of the process

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