Polysiloxane composition having radical-crosslinkable group

A cross-linking group, polysiloxane technology, which is applied in the photoengraving process of the pattern surface, the photosensitive material for opto-mechanical equipment, optics, etc., can solve the problem of inability to complete thermal imidization, curing film Reduced physical properties and other problems, to achieve the effect of high transparency and excellent resistance

Active Publication Date: 2014-12-24
ASAHI KASEI KK
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the case of the conventional polyimide resin precursor composition, thermal imidization cannot be completed if the curing temperature is lowered, and various cured film physical properties decrease, so the lower limit of the curing temperature is 300°C about

Method used

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  • Polysiloxane composition having radical-crosslinkable group
  • Polysiloxane composition having radical-crosslinkable group
  • Polysiloxane composition having radical-crosslinkable group

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0217] Examples of the compound (a) used in the production of carboxyl group-containing vinyl polymers include (meth)acrylic acid, carboxyethyl (meth)acrylate, carboxypentyl (meth)acrylate, 2- (Meth)acryloyloxyethylsuccinic acid, 2-(meth)acryloyloxyethylhexahydrophthalic acid, 2-(meth)acryloyloxyethylphthalic acid, rich Maleic acid, cinnamic acid, crotonic acid, itaconic acid, and maleic acid half ester, etc. These may be used alone or in combination of two or more.

[0218] As the aforementioned compound (b) used in the preparation of the carboxyl group-containing vinyl polymer, for example, methyl (meth)acrylate, ethyl (meth)acrylate, n-propyl (meth)acrylate, ( Lauryl methacrylate, cyclohexyl (meth)acrylate, n-butyl (meth)acrylate, 2-ethylhexyl (meth)acrylate, 2-hydroxyethyl (meth)acrylate, (meth)acrylate base) 2-hydroxypropyl acrylate, 4-hydroxybutyl (meth)acrylate, caprolactone (meth)acrylate, nonylphenoxy polypropylene glycol (meth)acrylate, polyethylene glycol mono(met...

Embodiment 1～14、 Embodiment 16～27

[0321] (Regarding Examples 1 to 14, Examples 16 to 27, and Comparative Examples 1 to 5)

[0322] After the exposure, the alkaline developer (Developer, 2.38% aqueous solution of tetramethylammonium hydroxide) was used at 23°C for 30 seconds x 2 times, followed by rinsing with pure water to remove the residue of the coating film. unexposed part. Next, the above-mentioned patterned substrate was baked at 220° C. for 30 minutes in an oven replaced by nitrogen to cure it.

Embodiment 15

[0324] After the exposure, image development was performed using PGMEA (propylene glycol monomethyl ether acetate) at 23° C. for 30 seconds×2 times, and the unexposed portion of the coating film was removed. Next, the above-mentioned patterned substrate was baked at 220° C. for 30 minutes in an oven replaced by nitrogen to cure it.

[0325] The exposure amount of the patterns obtained by observing the patterns obtained in Examples 1-27 and Comparative Examples 1-5 with an optical microscope was 400 mJ / cm 2 The part which was shielded from light in a square of 25 μm×25 μm was evaluated according to the following criteria.

[0326] 〇: There is no residue, opening, and pattern floating or peeling is not observed

[0327] △: Opened but partly remained, no pattern floating or peeling was observed

[0328] ×: There is residue and no opening, or the pattern floats or peels off

[0329] 2. Evaluation of resolution range

[0330] The pattern obtained above was observed with an opti...

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Abstract

Provided is a polysiloxane composition having radical-crosslinkable groups, the composition, when allowed to stand for 24 hours in the air at 24 C and ordinary pressure while being shielded from the light having any wavelength not longer than 400 nm and thereafter examined with an electron spin resonance (ESR) device, having a peak at a value of g of 2.034-1.984, and the composition containing radicals in an amount of 0.110-6 to 12010-6 mol per g of the solid components of the composition.

Description

technical field [0001] The present invention relates to an insulating material suitable for use in a display device, suitable for forming a surface protection film, an interlayer insulating film, an α-ray shielding film, etc. in a semiconductor device, and suitable for mounting an image sensor or a micromachine, A cured product or a transparent insulating film obtained by curing a polysiloxane composition having a radical crosslinkable group, such as a semiconductor device of a microactuator, or the like. Background technique [0002] Polyimide resins that have excellent heat resistance, electrical properties, and mechanical properties are widely used in applications such as insulating materials for electronic components, surface protection films, interlayer insulating films, and α-ray shielding films for semiconductor devices. The polyimide resin has the following characteristics: it is usually supplied in the form of a photosensitive polyimide precursor composition, which ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C08L83/04C08G77/04C08K5/32C08K5/3415C08K5/3435G03F7/004G03F7/075
CPCC08G77/20C08G77/80C08K5/14C08K5/32G03F7/027G03F7/0757C08L83/04
Inventor 佐佐木由香胜又彻
Owner ASAHI KASEI KK
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