Ti:Sapphire Laser Amplifier

Abstract

The invention provides a titanium sapphire laser amplifier, which comprises a pumping laser, a titanium sapphire crystal, a multi-path amplifier, a laser seed source and a synchronous time delay. The titanium sapphire laser amplifier is characterized in that a pumping light half wave plate is added into an output light path of the pumping laser, and a pumping light quarter wave plate and a pumping light reflecting mirror are sequentially added into a transmission light path of the titanium sapphire crystal. The titanium sapphire laser amplifier has the advantages that the transverse gain of the titanium sapphire crystal can be effectively reduced, so the parasitic oscillation of the titanium sapphire is well inhibited, in addition, the absorption rate of the titanium sapphire crystal on the pumping light can be improved, and the seed light amplification efficiency is improved. The titanium sapphire laser amplifier has the characteristics that the regulation is convenient, simplicity and high efficiency are realized, and the practicability is high.

Description

technical field [0001] The invention relates to a titanium sapphire laser amplifier, in particular to a titanium sapphire laser amplifier which can change the polarization of pump light and suppress the parasitic oscillation of the titanium sapphire laser amplifier. Background technique [0002] In 1985, the invention of chirped pulse amplification (CPA) technology made it possible to obtain petawatt (PW) level laser pulse output; in the past few decades, the CPA technology based on titanium sapphire has achieved unprecedented development . At present, the laser device based on Ti:Sapphire CPA technology has reached a laser output of 2.0PW. However, for a petawatt laser with an output energy of tens of joules, the terminal amplifier of the CPA must use a large-diameter Ti:Sapphire crystal. Since the lateral dimension of Ti:sapphire is much larger than the longitudinal dimension, under high-energy pumping, the lateral gain of Ti:sapphire is much greater than the longitudina...

AI Technical Summary

Problems solved by technology

However, this method is limited in high-energy pumped, large-aperture Ti:Sapphire systems due to the finite and wavelength-dependent refractive index of the matching fluid.

[0005] (2) The method of double-ended pumping Ti:Sapphire reduces the pump density, thereby reducing the lateral gain of Ti:Sapphire. This method cannot actively suppress parasitic oscillations, and the suppression ability is limited.

The synchronous delayer first triggers the 527nm pump laser to generate pump pulses to pump the Ti:sapphire crystal in the multi-pass amplifier, and after a delay of Δt, triggers the 800nm ​​laser seed source to generate 800nm ​​seed light and injects it into the multi-pass amplifier for amplification, reducing the The method of the absorption coefficient of Ti:Sapphire crystal in the multi-pass amplifier is to adopt low doping concentration (NT), thick Ti:Sapphire crystal, the expense that this method needs is very high, and versatility is poor, can not realize the continuously adjustable absorption coefficient, and Thick Ti:Sapphire crystals increase material dispersion and make compression of the seed pulse more difficult

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