Method and system for treating crude trichlorosilane

A technology for crude trichlorosilane and trichlorosilane, which is applied to halosilanes, halogenated silicon compounds, etc., can solve the problems that affect the normal operation of the reduction furnace, increase the production and operation cost, and the reduction furnace is prone to atomization. The effect of improving the utilization rate of raw materials, reducing the processing cost, and being easy to separate from the product

Inactive Publication Date: 2015-01-07
GUODIAN INNER MONGOLIA JINGYANG ENERGY
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Problems solved by technology

In the actual production process, the content of dichlorodihydrosilane in the reduction and recovery of trichlorosilane reaches 9 to 11%, which makes the reduction furnace prone to atomization and produces more amorphous silicon during the production process, which seriously affects the reduction. Normal operation of the furnace
At the same time, because the boiling point of dichlorodihydrosilane is similar to that of boron impurities, in order to ensure the quality of trichlorosilane products, it is necessary to discharge the non-condensable gas from the trichlorosilane purification tower to the three wastes process for leaching treatment, but the non-condensable gas still remains Contains a large amount of chlorosilanes with low boiling points, direct leaching causes problems such as high material consumption, high environmental protection pressure, etc., and increases production and operation costs

Method used

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  • Method and system for treating crude trichlorosilane
  • Method and system for treating crude trichlorosilane
  • Method and system for treating crude trichlorosilane

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Embodiment

[0117] Composition of crude trichlorosilane: 36.69wt% of dichlorodihydrosilane, 1.01wt% of trichlorosilane, 62.3wt% of silicon tetrachloride and trace impurities containing boron and phosphorus elements;

[0118] Processing method: reference image 3 , the crude trichlorosilane A obtained by the cold hydrogenation treatment unit is passed into the gas stripping device 100 at a pressure of 0.6 MPa, a temperature of the tower bottom of 137 degrees Celsius, and a temperature of 38.5 degrees Celsius at the top of the tower to carry out gas stripping treatment to obtain The mixture of dihydrosilane, trichlorosilane and silicon tetrachloride, then the mixture containing dichlorodihydrosilane, trichlorosilane and silicon tetrachloride is passed into the first purification device 200 at a pressure of 0.48MPa, The first purification treatment is carried out at a tower top temperature of 89 degrees Celsius and a tower bottom temperature of 129 degrees Celsius to obtain a first tower ove...

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Abstract

The invention discloses a method and a system for treating crude trichlorosilane. The method comprises the following steps: (1) carrying out air stripping treatment on crude trichlorosilane to obtain a mixture; (2) purifying the mixture for the first time to obtain a first top gas and a first bottom liquid; (3) purifying the first top gas for the second time to obtain a second top gas and a second bottom liquid; (4) mixing the first bottom liquid with the second bottom liquid to obtain a mixed material; (5) disproportionating the mixed material in the presence of supported ion exchange resin to obtain a disproportionated product; (6) purifying the disproportionated product for the third time to obtain a third bottom liquid; and (7) purifying the second bottom liquid and the third bottom liquid for the fourth time to obtain trichlorosilane and a fourth bottom liquid and returning the fourth bottom liquid for purification for the first time. By adopting the method, the problem of the enrichment of dichlorosilane and silicon tetrachloride in crude trichlorosilane can be effectively solved and the quality of trichlorosilane can be significantly improved.

Description

technical field [0001] The invention belongs to the technical field of polysilicon production, in particular, the invention relates to a method and system for processing crude trichlorosilane. Background technique [0002] In the process of polysilicon production, synthesis, reduction and cold hydrogenation units will produce a certain amount of by-product dichlorodihydrogen silicon, especially reduction. Compared with trichlorosilane, dichlorodihydrogensilane is easier to precipitate on the wall of the reduction furnace to produce amorphous silicon powder, so it is necessary to strictly control the concentration of dichlorodihydrogensilane below a certain level. In the actual production process, the content of dichlorodihydrosilane in the reduction and recovery of trichlorosilane reaches 9 to 11%, which makes the reduction furnace prone to atomization and produces more amorphous silicon during the production process, which seriously affects the reduction. normal operation ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B33/107
Inventor 李锋王利强张艳春王洪光欧昌洪濮希杰彭述才白竟超
Owner GUODIAN INNER MONGOLIA JINGYANG ENERGY
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