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Scanning microwave reflection method carrier recombination life test system and test method

A technology of microwave reflection and method carrier, which is applied in the direction of material analysis, measuring device, instrument, etc. by using microwave means, can solve the problem that the carrier life distribution of semiconductor crystal material cannot be measured, and achieve a compact probe structure, Improve lighting efficiency and complete results

Active Publication Date: 2017-09-15
广州昆德半导体测试技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in the above-mentioned life testers, most of them can only test the local area of ​​the semiconductor crystal material, and cannot measure the distribution of the carrier lifetime of the whole block (ingot) or the whole semiconductor crystal material, and the semiconductor The larger the measurement area of ​​the crystal material, the more complete and true the quality of the material can be reflected

Method used

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  • Scanning microwave reflection method carrier recombination life test system and test method
  • Scanning microwave reflection method carrier recombination life test system and test method
  • Scanning microwave reflection method carrier recombination life test system and test method

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Embodiment 1

[0034] The carrier recombination life test of the present invention adopts the microwave reflection method to test, and the principle of this method is: the pulsed infrared laser is irradiated on the sample to be tested, causing the photoconductivity change of the sample to be tested, and the microwave system emits And receive the microwave reflection signal, the change of the photoconductivity of the sample under test is proportional to the microwave reflection power within a certain range, the decay curve of the microwave reflection power reflects the photoconductivity decay curve, and can be calculated from the decay curve of the microwave reflection power the carrier recombination lifetime.

[0035] The structural composition of the scanning microwave reflection method carrier recombination life test system described in this embodiment is as follows figure 1 , 4As shown, it includes a pulsed laser system, a microwave system, a data acquisition system, a test control syste...

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Abstract

The invention discloses a scanning microwave reflection method carrier recombination life testing system and testing method. The testing system includes a pulse laser system, a microwave system, a data acquisition system, a scanning motion system, a motion control system, a test control system and a probe , the scanning motion system is used for three-dimensional positioning of the probe, and the motion control system is connected with the scanning motion system and the test control system respectively, and is used to drive the scanning motion system according to the instructions of the test control system; the pulse laser system and the microwave system are all set in the probe , the microwave system is connected with the data acquisition system, and the data acquisition system is connected with the test control system. The pulsed laser system generates a pulsed infrared laser, which passes through the middle opening of the microstrip antenna in the microwave system and irradiates the surface of the sample to be measured on the sample stage vertically. The invention can carry out scanning measurement of carrier lifetime distribution on large-area semiconductor crystal materials, and has a more compact structure and a small probe volume.

Description

technical field [0001] The invention relates to the research field of a carrier recombination life tester, in particular to a carrier recombination life test system and a test method using a scanning microwave reflection method. Background technique [0002] In the production process of semiconductor materials and devices, almost all the production equipment used contain metals. Therefore, the pollution of heavy metals (mainly iron) to semiconductor materials is a common problem, which seriously affects the performance of semiconductor crystal materials. The carrier recombination life is one of the important parameters to evaluate the performance of semiconductor materials. It can sensitively reflect the content of heavy metals. Therefore, the carrier recombination life tester is an It is an important tool in the research and production of photovoltaic enterprises and colleges and universities. [0003] At present, there are many kinds of carrier recombination life testers,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N17/00G01N22/00
Inventor 王昕李俊生冯小明田蕾
Owner 广州昆德半导体测试技术有限公司
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