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A kind of preparation method of high specific capacitance graphene supercapacitor electrode material

A technology for supercapacitors and electrode materials, which is applied in the manufacture of hybrid/electric double layer capacitors, etc., can solve the problems of reduced effective area of ​​charge conduction and storage, increased probability of charge annihilation, and poor wetting, etc. The probability of charge annihilation, the reduction of porosity effect, and the effect of improving electrochemical performance

Active Publication Date: 2017-03-22
长春市海拓科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The present invention aims to solve the problem that in the existing graphene preparation method, too high temperature may cause changes in the structural properties of graphene and the formation of graphene wrinkles, which hinders the transmission of charges and increases the probability of charge annihilation, and due to the hydrophobicity of graphene property, so that the graphene and the electrolyte can not be well wetted, resulting in the problem that the effective area of ​​charge conduction and storage is greatly reduced, and a preparation method of a high specific capacitance graphene supercapacitor electrode material is provided

Method used

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  • A kind of preparation method of high specific capacitance graphene supercapacitor electrode material
  • A kind of preparation method of high specific capacitance graphene supercapacitor electrode material
  • A kind of preparation method of high specific capacitance graphene supercapacitor electrode material

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specific Embodiment approach 1

[0020] Specific embodiment one: the preparation method of a kind of high specific capacitance graphene supercapacitor electrode material described in this embodiment is specifically carried out according to the following steps:

[0021] 1. Put the substrate material in the plasma-enhanced chemical vapor deposition vacuum device, evacuate to a pressure below 5Pa, feed argon gas with a gas flow rate of 10sccm-50sccm, and adjust the vacuuming speed to put the plasma-enhanced chemical vapor deposition vacuum device The medium pressure is controlled at 100Pa~300Pa, and under the pressure of 100Pa~300Pa and argon atmosphere, the temperature is raised to 700℃~900℃ at a heating rate of 30℃ / min;

[0022] 2. Introduce the carbon source gas, adjust the gas flow rate of the carbon source gas to 5sccm-35sccm, and the gas flow rate of the argon gas to 80sccm, and adjust the vacuuming speed to control the pressure in the plasma-enhanced chemical vapor deposition vacuum device to 200Pa-1000Pa,...

specific Embodiment approach 2

[0028] Embodiment 2: This embodiment differs from Embodiment 1 in that the base material in step 1 is a platinum-silicon substrate material, and the thickness of platinum in the platinum-silicon substrate material is 100 nm to 500 nm. Others are the same as in the first embodiment.

[0029] The base material described in this specific embodiment can be used as a current collector of a supercapacitor.

specific Embodiment approach 3

[0030] Embodiment 3: This embodiment differs from Embodiment 1 or Embodiment 2 in that the carbon source gas described in step 2 is methane. Others are the same as in the first or second embodiment.

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Abstract

The invention relates to a preparation method of a high-specific-capacitance graphene supercapacitor electrode material, and mainly solves the problems that in the existing graphene preparation method, the graphene structural property can be changed and the graphene corrugation can be formed due to excess temperature, so that transmission of electric charges is hindered, the annihilation probability of the electric charges is high; furthermore, due to the hydrophobicity of the graphene, the graphene cannot be wetted by an electrolyte solution well, so that the effective area for electric charge conduction and storage is greatly reduced. The preparation method comprises the following steps: placing a substrate material into a plasma enhanced chemical vapor deposition vacuum apparatus, feeding argon, adjusting the intensity of pressure, raising the temperature, feeding carbon source gas, conducting deposition, after deposition, stopping feeding the carbon source gas, conducting radio-frequency plasma etching, after the radio-frequency plasma etching, cooling the product to room temperature. The preparation method disclosed by the invention is used for preparation of the high-specific-capacitance graphene supercapacitor electrode material.

Description

technical field [0001] The invention relates to a preparation method of a graphene supercapacitor electrode material. Background technique [0002] With the advent of the information age, people have higher requirements for energy storage equipment. Supercapacitors have incomparable advantages over the currently widely used lithium batteries: high power density, fast charge and discharge rate, cycle life of more than 10,000 times, and wide operating temperature range. Therefore, supercapacitors are currently widely used in industries such as automobiles and consumer electronics. How to improve the energy density of supercapacitors, the development of high-performance electrode materials is one of the key technologies. At present, carbon nanomaterials are one of the ideal electrode materials for supercapacitors due to their good electrical and mechanical properties, corrosion resistance, chemical and high temperature stability and many other advantages. The use of graphene...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/86
CPCY02E60/13
Inventor 亓钧雷王旭张夫费维栋冯吉才
Owner 长春市海拓科技有限公司