Preparation method of porous g-C3N4 semi-conducting material

A g-c3n4, semiconductor technology, applied in the direction of nitrogen and non-metallic compounds, can solve the problems of high environmental hazards, cumbersome preparation process of hard template method, carbon residue, etc., and achieve the effect of avoiding cumbersome process and excellent photocatalytic performance.

Inactive Publication Date: 2015-01-28
ZHEJIANG UNIV
View PDF3 Cites 17 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the preparation process of the hard template method is cumbersome, the cost is high, and it is harmful to the environment,

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Preparation method of porous g-C3N4 semi-conducting material
  • Preparation method of porous g-C3N4 semi-conducting material

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0019] Porous g-C 3 N 4 A method for preparing a semiconductor material, comprising the steps of:

[0020] Step A: First, take the melamine powder and put it evenly in the corundum crucible boat, put it into the tube furnace, pass in argon to exhaust the air in the tube furnace, and under the protective atmosphere of argon, within 10 minutes Raise the temperature to 380°C, and then raise the temperature to the heat treatment temperature at a rate of 5°C / min. After heat treatment for a certain period of time, cool to room temperature to obtain a yellow block g-C 3 N 4 solid; block g-C 3 N 4 The solid was ground in an agate mortar to give g-C 3 N 4 particles;

[0021] Among them, the heat treatment temperature in the tube furnace is 500°C to 600°C; the heat treatment time is 2h to 5h;

[0022] Step B: Change g-C 3 N 4 Put the particles into the agate ball mill tank, then add agate balls and ball milling solvent in turn, and put them into a planetary ball mill for ball ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention relates to the field of semi-conducting materials and provides a preparation method of a porous g-C3N4 semi-conducting material. The preparation method comprises the following steps of putting melamine powder into a crucible boat, putting the crucible boat with melamine powder into a tubular furnace, carrying out heating treatment, carrying out cooling to obtain yellow blocky g-C3N4 solids, carrying out grinding, putting the g-C3N4 particles into a ball milling tank, carrying out ball milling pretreatment, adding the slurry obtained by ball milling with a same ball milling solvent, carrying out drying to obtain g-C3N4 particles, dispersing the g-C3N4 particles into ethanol, carrying out ultrasonic treatment for dispersion, adding sulfuric acid into the ethanol dispersion solution of g-C3N4 to adjust a pH value of the ethanol dispersion solution, and carrying out a hydro-thermal reaction process to obtain the porous g-C3N4. Through combination of a ball milling technology and protonation effects, the preparation method conveniently prepares the porous g-C3N4 and solves the problem that the traditional method produces g-C3N4 having a small specific surface area and low efficiency.

Description

technical field [0001] The present invention relates to the field of semiconductor materials, in particular to porous g-C 3 N 4 Methods for the preparation of semiconductor materials. Background technique [0002] g-C 3 N 4 It is a new type of non-metal semiconductor photocatalyst. Its special semiconductor characteristics, high chemical stability, non-toxic and easy preparation, and low cost make it have broad application prospects in the field of photocatalysis. However, the low specific surface area and quantum efficiency greatly limit its development. Currently, the preparation of porous g-C 3 N 4 It has become a commonly used method to improve the specific surface area and quantum efficiency. Many literatures have reported the preparation of porous g-C by hard template method and soft template method. 3 N 4 . However, the preparation process of the hard template method is cumbersome, the cost is high, and it is harmful to the environment, which is not conducive...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C01B21/082
Inventor 杨辉蔡奇风沈建超冯宇申乾宏
Owner ZHEJIANG UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap